FCPF22N60NT
- Mfr.Part #
- FCPF22N60NT
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A TO220F
- Stock
- 3,401
- In Stock :
- 3,401
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Series :
- SupreMOS™
- Continuous Drain Current (ID) :
- 22A
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 39W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- not_compliant
- Turn-Off Delay Time :
- 49 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1950pF @ 100V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±45V
- Turn On Delay Time :
- 16.9 ns
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Length :
- 10.16mm
- Resistance :
- 165mOhm
- Fall Time (Typ) :
- 4 ns
- Drain to Source Breakdown Voltage :
- 600V
- Case Connection :
- Isolated
- Lead Free :
- Lead Free
- Height :
- 15.9mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 165m Ω @ 11A, 10V
- Rise Time :
- 16.7ns
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 672 mJ
- Terminal Finish :
- Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Pulsed Drain Current-Max (IDM) :
- 66A
- Threshold Voltage :
- 3V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Number of Pins :
- 3
- Weight :
- 2.27g
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Published :
- 2013
- Power Dissipation :
- 39W
- Width :
- 4.7mm
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-220-3 Full Pack
- Datasheets
- FCPF22N60NT

N-Channel Tube 165m Ω @ 11A, 10V ±45V 1950pF @ 100V 45nC @ 10V TO-220-3 Full Pack
FCPF22N60NT Description
SupreMOS? MOSFETs are the next generation of high voltage super-junction (SJ) technology, with a deep trench filling method that sets them apart from traditional SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are all provided by this modern technology and perfect process control. SupreMOS MOSFETs are well-suited to high-frequency switching power converter applications such PFC, server/telecom power, FPD TV power, ATX power, and industrial power.
FCPF22N60NT Features
-
BVDSS = 650V @ TJ = 150°C
-
RDS(on) = 140m? ( Typ.) @ VGS = 10V, ID = 11A
-
Ultra low gate charge ( Typ. Qg = 45nC )
-
Low effective output capacitance ( Typ. Coss.eff = 196.4pF )
-
100% avalanche tested
-
RoHS compliant
FCPF22N60NT Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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