FCPF2250N80Z

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Mfr.Part #
FCPF2250N80Z
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 800V 2.6A TO220F
Stock
81
In Stock :
81

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
2.6A Tc
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Turn-Off Delay Time :
26 ns
Power Dissipation-Max :
21.9W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
800V
Packaging :
Tube
Reach Compliance Code :
not_compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rise Time :
6.7ns
Fall Time (Typ) :
8.7 ns
Vgs(th) (Max) @ Id :
4.5V @ 260μA
Vgs (Max) :
±20V
Resistance :
2.25Ohm
Turn On Delay Time :
11 ns
Terminal Finish :
Tin (Sn)
Factory Lead Time :
15 Weeks
Series :
SuperFET® II
Pbfree Code :
yes
Weight :
2.27g
RoHS Status :
ROHS3 Compliant
HTS Code :
8541.29.00.95
Continuous Drain Current (ID) :
2.6A
Package / Case :
TO-220-3 Full Pack
Mount :
Through Hole
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.25 Ω @ 1.3A, 10V
JESD-609 Code :
e3
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Mounting Type :
Through Hole
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
30V
Input Capacitance (Ciss) (Max) @ Vds :
585pF @ 100V
Datasheets
FCPF2250N80Z
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FCPF2250N80Z from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, FCPF2250N80Z pinout, FCPF2250N80Z datasheet PDF, FCPF2250N80Z amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FCPF2250N80Z ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FCPF2250N80Z


N-Channel Tube 2.25 Ω @ 1.3A, 10V ±20V 585pF @ 100V 14nC @ 10V 800V TO-220-3 Full Pack

FCPF2250N80Z Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 585pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 26 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 11 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

FCPF2250N80Z Features


a continuous drain current (ID) of 2.6A
the turn-off delay time is 26 ns
a 800V drain to source voltage (Vdss)


FCPF2250N80Z Applications


There are a lot of ON Semiconductor
FCPF2250N80Z applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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