FCPF20N60T
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- Mfr.Part #
- FCPF20N60T
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- POWER MOSFET, N-CHANNEL, SUPERFE
- Stock
- 1,216
- In Stock ：
- 1,216
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Pulsed Drain Current-Max (IDM) :
- 60A
- Series :
- SuperFET™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 690 mJ
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Published :
- 2013
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 20A
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 3080pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 600V
- Power Dissipation :
- 39W
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Current Rating :
- 20A
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Weight :
- 2.27g
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 230 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 10A, 10V
- Fall Time (Typ) :
- 65 ns
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3 Full Pack
- RoHS Status :
- RoHS Compliant
- JEDEC-95 Code :
- TO-220AB
- Drain to Source Breakdown Voltage :
- 600V
- Rise Time :
- 140ns
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 39W Tc
- Turn On Delay Time :
- 62 ns
- Case Connection :
- Isolated
- Datasheets
- FCPF20N60T
N-Channel Tube 190m Ω @ 10A, 10V ±30V 3080pF @ 25V 98nC @ 10V TO-220-3 Full Pack
FCPF20N60T Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 690 mJ.The maximum input capacitance of this device is 3080pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 20A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 230 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 60A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 62 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
FCPF20N60T Features
the avalanche energy rating (Eas) is 690 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 230 ns
based on its rated peak drain current 60A.
FCPF20N60T Applications
There are a lot of ON Semiconductor
FCPF20N60T applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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