FCPF20N60
- Mfr.Part #
- FCPF20N60
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 20A TO220F
- Stock
- 2,744
- In Stock :
- 2,744
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-220AB
- Threshold Voltage :
- 5V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Packaging :
- Tube
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 60A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 39W Tc
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 10A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Vgs (Max) :
- ±30V
- Series :
- SuperFET™
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- 20A
- Turn-Off Delay Time :
- 230 ns
- Height :
- 9.19mm
- Gate to Source Voltage (Vgs) :
- 30V
- Mount :
- Through Hole
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 600V
- Avalanche Energy Rating (Eas) :
- 690 mJ
- Turn On Delay Time :
- 62 ns
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 65 ns
- Voltage - Rated DC :
- 600V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Case Connection :
- Isolated
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 3080pF @ 25V
- Width :
- 4.7mm
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 20A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 2.27g
- Pbfree Code :
- yes
- Resistance :
- 190mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Rise Time :
- 140ns
- Package / Case :
- TO-220-3 Full Pack
- Factory Lead Time :
- 13 Weeks
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- Power Dissipation :
- 39W
- Contact Plating :
- Tin
- Length :
- 10.16mm
- Datasheets
- FCPF20N60

N-Channel Tube 190m Ω @ 10A, 10V ±30V 3080pF @ 25V 98nC @ 10V TO-220-3 Full Pack
FCPF20N60 Description
Fairchild Semiconductor's FCPF20N60 is the first generation of high-voltage super-junction (SJ) MOSFETs that use charge balancing technology to provide low on-resistance and lower gate charge performance. This technology is designed to reduce conducti on loss, improve switching performance, increase dv/dt rate, and increase available energy. SuperFET MOSFETs are hence ideal for switching power applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
FCPF20N60 Features
650V @ Tj = 150°C
Rds(o n) = 150 mQ type
Type Qg = 75 nC) Ultra Low Gate Charge
Coss(eff) = 165 pF) Low Effective Output Capacitance
100% Avalanche Approved
FCPF20N60 Applications
Solar Inverter
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