FCPF190N65S3L1

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Mfr.Part #
FCPF190N65S3L1
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 650V 14A TO220F-3
Stock
2,175
In Stock :
2,175

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
650V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
RoHS Status :
RoHS Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Element Configuration :
Single
Mount :
Through Hole
Weight :
2.27g
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
33W Tc
Terminal Finish :
Tin (Sn)
Rds On (Max) @ Id, Vgs :
190m Ω @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C :
14A Tc
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
4.5V @ 1.4mA
Moisture Sensitivity Level (MSL) :
Not Applicable
Input Capacitance (Ciss) (Max) @ Vds :
1225pF @ 400V
Operating Temperature :
-55°C~150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Series :
SuperFET® III
Pbfree Code :
yes
Factory Lead Time :
12 Weeks
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Package / Case :
TO-220-3 Full Pack
Vgs (Max) :
±30V
Datasheets
FCPF190N65S3L1
Introducing Transistors - FETs, MOSFETs - Single onsemi FCPF190N65S3L1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3 Full Pack, FCPF190N65S3L1 pinout, FCPF190N65S3L1 datasheet PDF, FCPF190N65S3L1 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCPF190N65S3L1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCPF190N65S3L1


N-Channel 190m Ω @ 7A, 10V ±30V 1225pF @ 400V 30nC @ 10V 650V TO-220-3 Full Pack

FCPF190N65S3L1 Description


The FCPF190N65S3L1 is a SUPERFIT ? III MOSFET which is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that utilised charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates.



FCPF190N65S3L1 Features


  • 700 V @ TJ= 150°C

  • Typ. RDS(on)= 165 m

  • Ultra Low Gate Charge (Typ. Qg= 30 nC)

  • Low Effective Output Capacitance (Typ. Coss(eff.)= 277 pF)

  • 100% Avalanche Tested



FCPF190N65S3L1 Applications


  • Computing / Display Power Supplies

  • Telecom / Server Power Supplies

  • Industrial Power Supplies

  • Lighting / Charger / Adapter


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