FCPF190N65FL1
- Mfr.Part #
- FCPF190N65FL1
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 20.6A TO220F
- Stock
- 34,679
- In Stock :
- 34,679
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Packaging :
- Tube
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 62 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 78nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 2.27g
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 190mOhm
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 650V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 10A, 10V
- Rise Time :
- 11ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3055pF @ 100V
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 20.6A Tc
- Turn On Delay Time :
- 25 ns
- Power Dissipation-Max :
- 39W Tc
- Fall Time (Typ) :
- 4.2 ns
- Continuous Drain Current (ID) :
- 20.6A
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Factory Lead Time :
- 12 Weeks
- JESD-30 Code :
- R-PSFM-T3
- Series :
- SuperFET® II
- Package / Case :
- TO-220-3 Full Pack
- Case Connection :
- Isolated
- Reach Compliance Code :
- not_compliant
- Datasheets
- FCPF190N65FL1

N-Channel Tube 190m Ω @ 10A, 10V ±20V 3055pF @ 100V 78nC @ 10V TO-220-3 Full Pack
FCPF190N65FL1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 400 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3055pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 650V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 650V.As a result of its turn-off delay time, which is 62 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 25 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
FCPF190N65FL1 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 20.6A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 62 ns
FCPF190N65FL1 Applications
There are a lot of ON Semiconductor
FCPF190N65FL1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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