FCPF190N60E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

39W

Turn On Delay Time :

23 ns

Current - Continuous Drain (Id) @ 25°C :

20.6A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

40 ns

Series :

SuperFET® II

Number of Elements :

1

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

190m Ω @ 10A, 10V

REACH SVHC :

No SVHC

Reach Compliance Code :

not_compliant

Factory Lead Time :

15 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mount :

Through Hole

Mounting Type :

Through Hole

Pbfree Code :

yes

Threshold Voltage :

2.5V

Drain to Source Voltage (Vdss) :

600V

Published :

2013

ECCN Code :

EAR99

Length :

10.36mm

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Number of Pins :

3

FET Type :

N-Channel

Power Dissipation-Max :

39W Tc

Drain to Source Breakdown Voltage :

650V

Continuous Drain Current (ID) :

20.6A

Turn-Off Delay Time :

212 ns

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Package / Case :

TO-220-3 Full Pack

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Rise Time :

38ns

Input Capacitance (Ciss) (Max) @ Vds :

3175pF @ 25V

Element Configuration :

Single

Height :

9.19mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

2.27g

Width :

4.9mm

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V