FCPF190N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Case Connection :

Isolated

Published :

2013

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Packaging :

Tube

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

600V

Height :

16.07mm

Rds On (Max) @ Id, Vgs :

199m Ω @ 10A, 10V

Mount :

Through Hole

Fall Time (Typ) :

5 ns

Factory Lead Time :

12 Weeks

Avalanche Energy Rating (Eas) :

400 mJ

Turn-Off Delay Time :

64 ns

Continuous Drain Current (ID) :

20.2A

Mounting Type :

Through Hole

Width :

4.9mm

Turn On Delay Time :

20 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

60.6A

Series :

SuperFET® II

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Length :

10.36mm

Power Dissipation :

39W

Rise Time :

10ns

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Power Dissipation-Max :

39W Tc

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

650V

Number of Terminations :

3

Contact Plating :

Tin

Threshold Voltage :

2.5V

Package / Case :

TO-220-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

20.2A Tc

Number of Elements :

1

Radiation Hardening :

No

Number of Pins :

3

Weight :

2.27g

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3