FCPF16N60NT
- Mfr.Part #
- FCPF16N60NT
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 17,073
- In Stock :
- 17,073
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Series :
- SupreMOS™
- Factory Lead Time :
- 12 Weeks
- Weight :
- 2.27g
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- JEDEC-95 Code :
- TO-220AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 2170pF @ 100V
- Case Connection :
- Isolated
- Height :
- 15.9mm
- Turn-Off Delay Time :
- 60.3 ns
- Rds On (Max) @ Id, Vgs :
- 199m Ω @ 8A, 10V
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 600V
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 4.7mm
- Threshold Voltage :
- 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 52.3nC @ 10V
- Length :
- 10.16mm
- Resistance :
- 199mOhm
- Package / Case :
- TO-220-3 Full Pack
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 16A
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 20.2 ns
- Turn On Delay Time :
- 15.8 ns
- Published :
- 2009
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 35.7W Tc
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation :
- 357W
- Rise Time :
- 15.5ns
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 48A
- Pbfree Code :
- yes
- Nominal Vgs :
- 2 V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- REACH SVHC :
- No SVHC
- Datasheets
- FCPF16N60NT

N-Channel Tube 199m Ω @ 8A, 10V ±30V 2170pF @ 100V 52.3nC @ 10V TO-220-3 Full Pack
FCPF16N60NT Description
FCPF16N60NT is an N-channel SupreMOS MOSFET manufactured by onsemi. The MOSFET FCPF16N60NT is the next generation of high voltage super-junction (SJ) technology, with a deep trench filling method that distinguishes it from regular SJ MOSFETs. The FCPF16N60NT results in the lowest Rsp on-resistance, superior switching performance, and robustness. The onsemi SupreMOS MOSFET is well suited for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power.
FCPF16N60NT Features
-
RDS(on) = 170m? ( Typ.) @ VGS = 10V, ID = 8A
-
Ultra low gate charge ( Typ. Qg = 40.2nC )
-
Low effective output capacitance ( Typ. Coss.eff = 176pF )
-
100% avalanche tested
-
RoHS compliant
FCPF16N60NT Applications
-
LCD/LED/PDP TV
-
Lighting
-
ATX power
-
Solar Inverter
-
AC-DC Power Supply
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