FCPF16N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Height :

9.4mm

Transistor Element Material :

SILICON

Turn-Off Delay Time :

165 ns

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

2.27g

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Pulsed Drain Current-Max (IDM) :

48A

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Pbfree Code :

yes

ECCN Code :

EAR99

Element Configuration :

Single

Number of Terminations :

3

Drain to Source Breakdown Voltage :

600V

Power Dissipation :

37.9W

Mounting Type :

Through Hole

Series :

SuperFET™

Packaging :

Tube

Turn On Delay Time :

42 ns

Fall Time (Typ) :

90 ns

Length :

10.1mm

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

37.9W Tc

Package / Case :

TO-220-3 Full Pack

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

Number of Elements :

1

Rise Time :

130ns

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 3 days ago)

Resistance :

260mOhm

Current - Continuous Drain (Id) @ 25°C :

16A Tc

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

16A

Width :

4.7mm

Case Connection :

Isolated

Number of Pins :

3

Factory Lead Time :

43 Weeks

Rds On (Max) @ Id, Vgs :

260m Ω @ 8A, 10V