FCPF165N65S3L1

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Mfr.Part #
FCPF165N65S3L1
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 650V 19A TO220F-3
Stock
2,619
In Stock :
2,619

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Factory Lead Time :
14 Weeks
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
650V
Package / Case :
TO-220-3 Full Pack
Current - Continuous Drain (Id) @ 25°C :
19A Tc
Vgs(th) (Max) @ Id :
4.5V @ 1.9mA
Mount :
Through Hole
Packaging :
Tube
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Weight :
2.27g
Vgs (Max) :
±30V
Operating Temperature :
-55°C~150°C
Rds On (Max) @ Id, Vgs :
165m Ω @ 9.5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1415pF @ 400V
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e3
RoHS Status :
RoHS Compliant
Series :
SuperFET® III
Terminal Finish :
Tin (Sn)
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
35W Tc
Datasheets
FCPF165N65S3L1
Introducing Transistors - FETs, MOSFETs - Single onsemi FCPF165N65S3L1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Operating Temperature:-55°C~150°C, FCPF165N65S3L1 pinout, FCPF165N65S3L1 datasheet PDF, FCPF165N65S3L1 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCPF165N65S3L1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCPF165N65S3L1


N-Channel Tube 165m Ω @ 9.5A, 10V ±30V 1415pF @ 400V 35nC @ 10V 650V TO-220-3 Full Pack

FCPF165N65S3L1 Description


SUPERFET III MOSFET is ON Semiconductor?ˉs brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.



FCPF165N65S3L1 Features


  • RoHS Compliant

  • 700 V @ TJ = 150 ??C

  • Optimized Capacitance

  • Typ. RDS(on) = 140 m|? 

  • 100% Avalanche Tested

  • Internal Gate Resistance: 4.6 ohm

  • Ultra Low Gate Charge (Typ. Qg = 35 nC)

  • Low Effective Output Capacitance (Typ. Coss(eff.) = 345 pF)  


   

FCPF165N65S3L1 Applications

  • Industrial

  • Consumer

  • Computing


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