FCPF165N65S3L1
- Mfr.Part #
- FCPF165N65S3L1
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 19A TO220F-3
- Stock
- 2,619
- In Stock :
- 2,619
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 14 Weeks
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 650V
- Package / Case :
- TO-220-3 Full Pack
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 1.9mA
- Mount :
- Through Hole
- Packaging :
- Tube
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Weight :
- 2.27g
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -55°C~150°C
- Rds On (Max) @ Id, Vgs :
- 165m Ω @ 9.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1415pF @ 400V
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- RoHS Status :
- RoHS Compliant
- Series :
- SuperFET® III
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 35W Tc
- Datasheets
- FCPF165N65S3L1

N-Channel Tube 165m Ω @ 9.5A, 10V ±30V 1415pF @ 400V 35nC @ 10V 650V TO-220-3 Full Pack
FCPF165N65S3L1 Description
SUPERFET III MOSFET is ON Semiconductor?ˉs brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
FCPF165N65S3L1 Features
-
RoHS Compliant
-
700 V @ TJ = 150 ??C
-
Optimized Capacitance
-
Typ. RDS(on) = 140 m|?
-
100% Avalanche Tested
-
Internal Gate Resistance: 4.6 ohm
-
Ultra Low Gate Charge (Typ. Qg = 35 nC)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 345 pF)
FCPF165N65S3L1 Applications
-
Industrial
-
Consumer
-
Computing
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