ES6U42T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

FET Type :

P-Channel

Rise Time :

8ns

Drain Current-Max (Abs) (ID) :

1A

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

10

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

2V @ 1mA

JESD-609 Code :

e2

Factory Lead Time :

10 Weeks

Gate to Source Voltage (Vgs) :

12V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 10V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Number of Channels :

1

Continuous Drain Current (ID) :

1A

Turn-Off Delay Time :

25 ns

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Power Dissipation-Max :

700mW Ta

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Number of Elements :

1

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.43Ohm

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Lead Free :

Lead Free

Vgs (Max) :

±12V

Number of Terminations :

6

Pin Count :

6

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

SOT-563, SOT-666

Published :

2009

Turn On Delay Time :

9 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

FET Feature :

Schottky Diode (Body)

Rds On (Max) @ Id, Vgs :

390m Ω @ 1A, 4.5V

Drain to Source Breakdown Voltage :

-20V

Radiation Hardening :

No

Terminal Finish :

Tin/Copper (Sn/Cu)

Fall Time (Typ) :

10 ns

Number of Pins :

6