ES6U2T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

5 ns

Published :

2009

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Mounting Type :

Surface Mount

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 4.5V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1V @ 1mA

Pbfree Code :

yes

Number of Elements :

1

JESD-609 Code :

e2

Continuous Drain Current (ID) :

1.5A

Package / Case :

SOT-563, SOT-666

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

6

Fall Time (Typ) :

3 ns

ECCN Code :

EAR99

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 10V

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

20V

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Gate to Source Voltage (Vgs) :

10V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.24Ohm

Vgs (Max) :

±10V

Lead Free :

Lead Free

Additional Feature :

ESD PROTECTED

Turn-Off Delay Time :

20 ns

Qualification Status :

Not Qualified

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.5A, 4.5V

Rise Time :

5ns

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

10

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

700mW Ta

JESD-30 Code :

R-PDSO-F6

Terminal Finish :

Tin/Copper (Sn/Cu)

Pin Count :

6

FET Feature :

Schottky Diode (Isolated)