ES6U41T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

FET Type :

N-Channel

FET Feature :

Schottky Diode (Isolated)

Lead Free :

Lead Free

Number of Elements :

1

Turn-Off Delay Time :

15 ns

Number of Terminations :

6

Drain to Source Breakdown Voltage :

30V

Vgs (Max) :

±12V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Terminal Form :

Flat

Pin Count :

6

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

Number of Channels :

1

JESD-609 Code :

e2

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Finish :

Tin/Copper (Sn/Cu)

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.5V

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

1.5A

Power Dissipation-Max :

700mW Ta

ECCN Code :

EAR99

Mount :

Surface Mount

Rise Time :

9ns

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Position :

Dual

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Turn On Delay Time :

7 ns

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

12V

Rds On (Max) @ Id, Vgs :

240m Ω @ 1.5A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.34Ohm

Fall Time (Typ) :

6 ns

Vgs(th) (Max) @ Id :

1.5V @ 1mA

JESD-30 Code :

R-PDSO-F6

Package / Case :

SOT-563, SOT-666