ES6U1T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

DS Breakdown Voltage-Min :

12V

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Mounting Type :

Surface Mount

Vgs (Max) :

±10V

Packaging :

Cut Tape (CT)

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

1.3A

Vgs(th) (Max) @ Id :

1V @ 1mA

Rds On (Max) @ Id, Vgs :

260m Ω @ 1.3A, 4.5V

JESD-609 Code :

e2

Gate Charge (Qg) (Max) @ Vgs :

2.4nC @ 4.5V

Pbfree Code :

yes

Terminal Finish :

Tin/Copper (Sn/Cu)

Drain-source On Resistance-Max :

0.26Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Terminal Form :

Flat

FET Type :

P-Channel

Power Dissipation-Max :

700mW Ta

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-F6

Drain to Source Voltage (Vdss) :

12V

Mount :

Surface Mount

Pin Count :

6

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 6V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

10 Weeks

FET Feature :

Schottky Diode (Isolated)

Transistor Element Material :

SILICON

Number of Terminations :

6

Qualification Status :

Not Qualified

Operating Temperature :

150°C TJ

Package / Case :

SOT-563, SOT-666