EMZ1T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Continuous Collector Current :

-150mA

Max Collector Current :

150mA

Frequency :

180MHz

hFE Min :

120

Power Dissipation :

150mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

180MHz

Factory Lead Time :

13 Weeks

Operating Supply Voltage :

50V

Transistor Element Material :

SILICON

Frequency - Transition :

180MHz 140MHz

Published :

2000

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

100nA ICBO

Polarity :

NPN, PNP

Base Part Number :

*MZ1

Number of Elements :

2

Emitter Base Voltage (VEBO) :

-6V

Max Breakdown Voltage :

50V

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

60V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

50V

Transistor Type :

NPN, PNP

Pin Count :

6

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

150mW

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

10

REACH SVHC :

No SVHC

Mount :

Surface Mount

Number of Pins :

6

Max Output Current :

150mA

Gain Bandwidth Product :

180MHz

Current Rating :

150mA

Number of Terminations :

6

Package / Case :

SOT-563, SOT-666

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Voltage - Rated DC :

50V

Pbfree Code :

yes

Terminal Form :

Flat

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V