EMZ1DXV6T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Type :

NPN, PNP

Voltage - Rated DC :

-60V

Current - Collector Cutoff (Max) :

500nA ICBO

Number of Terminations :

6

Polarity :

PNP

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

180MHz

Collector Emitter Voltage (VCEO) :

400mV

Lead Free :

Lead Free

Published :

2006

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

60V

Terminal Form :

Flat

Number of Elements :

2

Pbfree Code :

yes

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Emitter Base Voltage (VEBO) :

6V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Gain Bandwidth Product :

140MHz

Frequency - Transition :

180MHz 140MHz

Package / Case :

SOT-563, SOT-666

ECCN Code :

EAR99

Element Configuration :

Dual

Transistor Element Material :

SILICON

Power - Max :

500mW

Transistor Application :

AMPLIFIER

RoHS Status :

Non-RoHS Compliant

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Pin Count :

6

Base Part Number :

EMZ1

Collector Base Voltage (VCBO) :

-50V

hFE Min :

120

Qualification Status :

Not Qualified

Collector Emitter Saturation Voltage :

-500mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

500mW

Terminal Finish :

Tin (Sn)

Number of Pins :

6

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Current Rating :

-100mA