EMZ1DXV6T5

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Voltage - Rated DC :

60V

Pin Count :

6

Collector Emitter Voltage (VCEO) :

400mV

Number of Pins :

6

Element Configuration :

Dual

Max Collector Current :

100mA

Mount :

Surface Mount

Transistor Type :

NPN, PNP

Package / Case :

SOT-563, SOT-666

Max Power Dissipation :

500mW

hFE Min :

120

Collector Emitter Saturation Voltage :

-500mV

RoHS Status :

Non-RoHS Compliant

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Gain Bandwidth Product :

140MHz

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Transistor Application :

AMPLIFIER

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Number of Elements :

2

Base Part Number :

EMZ1

Emitter Base Voltage (VEBO) :

6V

Current Rating :

100mA

Collector Base Voltage (VCBO) :

-50V

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

60V

Polarity :

PNP

Terminal Form :

Flat

Qualification Status :

Not Qualified

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA ICBO

JESD-609 Code :

e3

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Tin (Sn)

Number of Terminations :

6

Frequency - Transition :

180MHz 140MHz

Transition Frequency :

180MHz

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)