EMH6T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Breakdown Voltage :

50V

Transition Frequency :

250MHz

JESD-609 Code :

e3/e2

Element Configuration :

Dual

Transistor Application :

SWITCHING

Min Operating Temperature :

-55°C

Base Part Number :

*MH6

Terminal Finish :

TIN/TIN COPPER

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Frequency - Transition :

250MHz

Polarity :

NPN

HTS Code :

8541.21.00.75

Package / Case :

SOT-563, SOT-666

REACH SVHC :

No SVHC

Max Operating Temperature :

150°C

Radiation Hardening :

No

Voltage - Rated DC :

50V

Pin Count :

6

Resistor - Emitter Base (R2) :

47k Ω

Published :

2004

Collector Emitter Breakdown Voltage :

50V

Lead Free :

Lead Free

Max Collector Current :

100mA

Resistor - Base (R1) :

47k Ω

Number of Terminations :

6

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1.2

hFE Min :

68

Continuous Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Max Power Dissipation :

150mW

Number of Pins :

6

Power Dissipation :

150mW

ECCN Code :

EAR99

Max Output Current :

100mA

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

10

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

500nA

Current Rating :

30mA

Operating Supply Voltage :

50V

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

300mV

Transistor Type :

2 NPN - Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V