EMH6T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Continuous Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

500nA

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Transition Frequency :

250MHz

Power Dissipation :

150mW

hFE Min :

68

HTS Code :

8541.21.00.75

Radiation Hardening :

No

Lead Free :

Lead Free

Package / Case :

SOT-563, SOT-666

Voltage - Rated DC :

50V

Time@Peak Reflow Temperature-Max (s) :

10

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

150mW

Operating Supply Voltage :

50V

Frequency - Transition :

250MHz

Collector Emitter Voltage (VCEO) :

300mV

Number of Elements :

2

JESD-609 Code :

e3/e2

ECCN Code :

EAR99

Pin Count :

6

Current Rating :

30mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Resistor - Base (R1) :

47k Ω

Pbfree Code :

yes

Terminal Finish :

TIN/TIN COPPER

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Mount :

Surface Mount

Published :

2004

Polarity :

NPN

Element Configuration :

Dual

Min Operating Temperature :

-55°C

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1.2

Max Operating Temperature :

150°C

Max Output Current :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Base Part Number :

*MH6

Terminal Form :

Flat

Resistor - Emitter Base (R2) :

47k Ω