EMH61T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

150mV

Max Power Dissipation :

150mW

Package / Case :

SOT-563, SOT-666

Max Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

2 NPN - Pre-Biased (Dual)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

NPN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Resistor - Base (R1) :

10k Ω

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Number of Elements :

2

Published :

2017

Packaging :

Cut Tape (CT)

Frequency - Transition :

250MHz

Mounting Type :

Surface Mount

Factory Lead Time :

10 Weeks

JESD-30 Code :

R-PDSO-F6

RoHS Status :

ROHS3 Compliant

Max Collector Current :

50mA

ECCN Code :

EAR99

Power - Max :

150mW

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Terminal Form :

Flat

Mount :

Surface Mount

Resistor - Emitter Base (R2) :

10k Ω

Transition Frequency :

250MHz

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 5mA