EMG2T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Mount :

Surface Mount

Mounting Type :

Surface Mount

Published :

2004

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

150°C

Number of Elements :

2

Terminal Finish :

Tin/Copper (Sn/Cu)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Power Dissipation :

150mW

Package / Case :

6-SMD (5 Leads), Flat Lead

Max Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

47k Ω

Number of Pins :

5

Max Power Dissipation :

150mW

hFE Min :

68

Continuous Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

10

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

50V

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e2

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Number of Terminations :

5

Min Operating Temperature :

-55°C

Current - Collector Cutoff (Max) :

500nA

Pin Count :

5

Polarity :

NPN

Factory Lead Time :

13 Weeks

Transistor Application :

SWITCHING

Base Part Number :

*MG2

Radiation Hardening :

No

Transistor Type :

2 NPN - Pre-Biased (Dual)

Current Rating :

30mA

Frequency - Transition :

250MHz

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

47k Ω

Transition Frequency :

250MHz

Pbfree Code :

yes

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

300mV

Lead Free :

Lead Free