EMG2DXV5T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Resistor - Base (R1) :

47k Ω

Lead Free :

Lead Free

Power Dissipation :

230mW

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Collector Emitter Voltage (VCEO) :

250mV

Qualification Status :

Not Qualified

Pin Count :

5

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Package / Case :

SOT-553

Base Part Number :

EMG

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Flat

Transistor Application :

SWITCHING

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Max Operating Temperature :

150°C

Current - Collector Cutoff (Max) :

500nA

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

50V

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

hFE Min :

80

Resistor - Emitter Base (R2) :

47k Ω

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Elements :

2

RoHS Status :

RoHS Compliant

Max Power Dissipation :

230mW

Number of Pins :

5

JESD-609 Code :

e3

Number of Terminations :

5

Polarity :

NPN

Transistor Type :

2 NPN - Pre-Biased (Dual)

Max Collector Current :

100mA

Continuous Collector Current :

100mA

Surface Mount :

yes

Current Rating :

100mA