EMG2DXV5T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Power Dissipation :

230mW

Packaging :

Tape and Reel (TR)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

RoHS Status :

RoHS Compliant

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Lead Free :

Lead Free

Resistor - Base (R1) :

47k Ω

Polarity :

NPN

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Mounting Type :

Surface Mount

Number of Pins :

5

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

230mW

Base Part Number :

EMG

Qualification Status :

Not Qualified

Max Collector Current :

100mA

Published :

2005

Pbfree Code :

yes

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

250mV

Peak Reflow Temperature (Cel) :

260

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

hFE Min :

80

Transistor Type :

2 NPN - Pre-Biased (Dual)

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

100mA

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-553

Surface Mount :

yes

Number of Terminations :

5

Resistor - Emitter Base (R2) :

47k Ω

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Min Operating Temperature :

-55°C

Pin Count :

5

Current - Collector Cutoff (Max) :

500nA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Voltage - Rated DC :

50V

Continuous Collector Current :

100mA