EMG2DXV5T5

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Emitter Base Voltage (VEBO) :

6V

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

hFE Min :

80

Current - Collector Cutoff (Max) :

500nA

Peak Reflow Temperature (Cel) :

260

Width :

1.3mm

Height :

600μm

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

JESD-609 Code :

e3

Number of Terminations :

5

Transistor Type :

2 NPN - Pre-Biased (Dual)

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2010

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Pins :

5

Terminal Form :

Flat

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

50V

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Voltage - Rated DC :

50V

Current Rating :

100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Factory Lead Time :

17 Weeks

Resistor - Base (R1) :

47k Ω

ECCN Code :

EAR99

Pin Count :

5

Pbfree Code :

yes

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

47k Ω

Mounting Type :

Surface Mount

Max Power Dissipation :

230mW

Continuous Collector Current :

100mA

Length :

1.7mm

Package / Case :

SOT-553

Collector Emitter Saturation Voltage :

250mV

Min Operating Temperature :

-55°C

Base Part Number :

EMG

Max Operating Temperature :

150°C

Number of Elements :

2

Halogen Free :

Halogen Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Power Dissipation :

230mW

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Surface Mount :

yes

Polarity :

NPN