EMG2DXV5T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Transistor Element Material :

SILICON

Number of Elements :

2

Terminal Form :

Flat

JESD-30 Code :

R-PDSO-F5

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Package / Case :

SOT-553

Current - Collector (Ic) (Max) :

100mA

Resistor - Emitter Base (R2) :

47k Ω

Packaging :

Tape and Reel (TR)

Pin Count :

5

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Resistor - Base (R1) :

47k Ω

Surface Mount :

yes

Voltage - Collector Emitter Breakdown (Max) :

50V

Transistor Type :

2 NPN - Pre-Biased (Dual)

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500nA

Reach Compliance Code :

Unknown

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Power - Max :

230mW