EMB11FHAT2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2016

Resistor - Base (R1) :

10k Ω

RoHS Status :

ROHS3 Compliant

Transition Frequency :

250MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

13 Weeks

Transistor Application :

SWITCHING

Terminal Form :

Flat

Series :

Automotive, AEC-Q101

Power - Max :

150mW

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

10k Ω

Surface Mount :

yes

Transistor Element Material :

SILICON

Number of Elements :

2

Number of Terminations :

6

Frequency - Transition :

250MHz

Polarity/Channel Type :

PNP

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1.0

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

JESD-30 Code :

R-PDSO-F6

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Current - Collector (Ic) (Max) :

100mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector-Emitter Voltage-Max :

50V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Reach Compliance Code :

not_compliant

Transistor Type :

2 PNP - Pre-Biased (Dual)

Package / Case :

SOT-563, SOT-666

ECCN Code :

EAR99

Packaging :

Cut Tape (CT)