EMB11T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Radiation Hardening :

No

JESD-609 Code :

e2

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5mA 5V

Collector Emitter Voltage (VCEO) :

300mV

Continuous Collector Current :

-100mA

RoHS Status :

ROHS3 Compliant

Transition Frequency :

250MHz

HTS Code :

8541.21.00.75

Resistor - Emitter Base (R2) :

10k Ω

Published :

2004

Terminal Form :

Flat

Number of Pins :

6

Transistor Type :

2 PNP - Pre-Biased (Dual)

Number of Terminations :

6

Lead Free :

Lead Free

Terminal Finish :

TIN COPPER

Max Power Dissipation :

150mW

Current Rating :

-50mA

Max Breakdown Voltage :

50V

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Base Part Number :

MB11

Collector Emitter Breakdown Voltage :

50V

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA

Number of Elements :

2

ECCN Code :

EAR99

hFE Min :

20

Factory Lead Time :

13 Weeks

Resistor - Base (R1) :

10k Ω

Transistor Application :

SWITCHING

Voltage - Rated DC :

-50V

Packaging :

Tape and Reel (TR)

Frequency - Transition :

250MHz

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Polarity :

PNP

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Package / Case :

SOT-563, SOT-666

Max Operating Temperature :

150°C

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

10

Power Dissipation :

150mW

Element Configuration :

Dual