EMB11T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

HTS Code :

8541.21.00.75

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

500nA

Max Breakdown Voltage :

50V

Current Rating :

-50mA

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

50V

Published :

2004

Pin Count :

6

ECCN Code :

EAR99

Number of Terminations :

6

Element Configuration :

Dual

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Resistor - Base (R1) :

10k Ω

Terminal Form :

Flat

Number of Elements :

2

JESD-609 Code :

e2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5mA 5V

Factory Lead Time :

13 Weeks

Number of Pins :

6

hFE Min :

20

Power Dissipation :

150mW

Voltage - Rated DC :

-50V

Resistor - Emitter Base (R2) :

10k Ω

Transition Frequency :

250MHz

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Transistor Type :

2 PNP - Pre-Biased (Dual)

Polarity :

PNP

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Base Part Number :

MB11

Frequency - Transition :

250MHz

Continuous Collector Current :

-100mA

Max Power Dissipation :

150mW

Min Operating Temperature :

-55°C

Collector Emitter Voltage (VCEO) :

300mV

Terminal Finish :

TIN COPPER

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

10

Mount :

Surface Mount

Package / Case :

SOT-563, SOT-666

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount