DXT2014P5-13
- Mfr.Part #
- DXT2014P5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS PNP 140V 4A POWERDI5
- Stock
- 2,790
- In Stock :
- 2,790
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 95.991485mg
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 300mA, 3A
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Flat
- Collector Emitter Voltage (VCEO) :
- 140V
- Power Dissipation :
- 3.2W
- Manufacturer Package Identifier :
- POWERDI-5
- JEDEC-95 Code :
- TO-252
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Breakdown Voltage :
- 140V
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Terminal Position :
- Dual
- Published :
- 2016
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- -4A
- Terminal Finish :
- Matte Tin (Sn)
- Transition Frequency :
- 120MHz
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Base Part Number :
- DXT2014P5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- PowerDI™ 5
- Max Collector Current :
- 4A
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- -360mV
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 180V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- -7V
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Pin Count :
- 4
- Frequency :
- 120MHz
- Number of Terminations :
- 3
- Max Power Dissipation :
- 3.2W
- Max Breakdown Voltage :
- 140V
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 120MHz
- Datasheets
- DXT2014P5-13
DXT2014P5-13 Documents

PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT2014P5-13 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -360mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 360mV @ 300mA, 3A.Single BJT transistor is recommended to keep the continuous collector voltage at -4A in order to achieve high efficiency.The emitter base voltage can be kept at -7V for high efficiency.The part has a transition frequency of 120MHz.The breakdown input voltage is 140V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
DXT2014P5-13 Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -360mV
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at -7V
a transition frequency of 120MHz
DXT2014P5-13 Applications
There are a lot of Diodes Incorporated
DXT2014P5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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