DXT2014P5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

4A

Current - Collector Cutoff (Max) :

20nA ICBO

Max Power Dissipation :

3.2W

Peak Reflow Temperature (Cel) :

260

Transistor Type :

PNP

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

140V

JEDEC-95 Code :

TO-252

Continuous Collector Current :

-4A

Power Dissipation :

3.2W

Max Breakdown Voltage :

140V

Emitter Base Voltage (VEBO) :

-7V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A 5V

Terminal Form :

Flat

Collector Emitter Saturation Voltage :

-360mV

Mount :

Surface Mount

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Manufacturer Package Identifier :

POWERDI-5

Case Connection :

COLLECTOR

Base Part Number :

DXT2014P5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

360mV @ 300mA, 3A

RoHS Status :

ROHS3 Compliant

Weight :

95.991485mg

Transistor Element Material :

SILICON

Package / Case :

PowerDI™ 5

JESD-609 Code :

e3

Transition Frequency :

120MHz

Collector Base Voltage (VCBO) :

180V

Gain Bandwidth Product :

120MHz

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2016

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Number of Elements :

1

Pin Count :

4

ECCN Code :

EAR99

Pbfree Code :

yes

Transistor Application :

SWITCHING

Number of Terminations :

3

Terminal Position :

Dual

Element Configuration :

Single

Frequency :

120MHz

Collector Emitter Breakdown Voltage :

140V

Factory Lead Time :

15 Weeks