DXT2012P5-13
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- Mfr.Part #
- DXT2012P5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS PNP 60V 5.5A POWERDI5
- Stock
- 51,826
- In Stock ：
- 51,826
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Max Collector Current :
- 5.5A
- Pin Count :
- 4
- Factory Lead Time :
- 15 Weeks
- Published :
- 2012
- JESD-30 Code :
- R-PDSO-F3
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Terminal Form :
- Flat
- Max Power Dissipation :
- 3.2W
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 5
- Terminal Finish :
- Matte Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Manufacturer Package Identifier :
- POWERDI-5
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 3.2W
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -250mV
- Emitter Base Voltage (VEBO) :
- -7V
- Gain Bandwidth Product :
- 120MHz
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500mA, 5A
- Base Part Number :
- DXT2012P5
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Package / Case :
- PowerDI™ 5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 60V
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 60V
- Frequency :
- 120MHz
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 95.991485mg
- Continuous Collector Current :
- -5.5A
- Transition Frequency :
- 120MHz
- JESD-609 Code :
- e3
- Datasheets
- DXT2012P5-13
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT2012P5-13 Overview
In this device, the DC current gain is 100 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 500mA, 5A.A -5.5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 5.5A volts at Single BJT transistors maximum.
DXT2012P5-13 Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 500mA, 5A
the emitter base voltage is kept at -7V
a transition frequency of 120MHz
DXT2012P5-13 Applications
There are a lot of Diodes Incorporated
DXT2012P5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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