DXT2012P5-13
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- Mfr.Part #
- DXT2012P5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS PNP 60V 5.5A POWERDI5
- Stock
- 51,826
- In Stock ：
- 51,826
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Package / Case :
- PowerDI™ 5
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- -250mV
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Published :
- 2012
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- Power Dissipation :
- 3.2W
- Frequency :
- 120MHz
- Emitter Base Voltage (VEBO) :
- -7V
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- DXT2012P5
- Gain Bandwidth Product :
- 120MHz
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Terminal Position :
- Dual
- JESD-30 Code :
- R-PDSO-F3
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Transition Frequency :
- 120MHz
- Manufacturer Package Identifier :
- POWERDI-5
- Weight :
- 95.991485mg
- Factory Lead Time :
- 15 Weeks
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 4
- Number of Pins :
- 5
- Max Collector Current :
- 5.5A
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Collector Current :
- -5.5A
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 3.2W
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500mA, 5A
- Collector Emitter Breakdown Voltage :
- 60V
- Datasheets
- DXT2012P5-13
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT2012P5-13 Overview
In this device, the DC current gain is 100 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 500mA, 5A.A -5.5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 5.5A volts at Single BJT transistors maximum.
DXT2012P5-13 Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 500mA, 5A
the emitter base voltage is kept at -7V
a transition frequency of 120MHz
DXT2012P5-13 Applications
There are a lot of Diodes Incorporated
DXT2012P5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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