DXT2011P5-13

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Mfr.Part #
DXT2011P5-13
Manufacturer
Diodes Incorporated
Package / Case
PowerDI™ 5
Datasheet
Download
Description
TRANS NPN 100V 6A POWERDI5
Stock
9,645
In Stock :
9,645

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Transistor Element Material :
SILICON
Terminal Position :
Dual
Weight :
95.991485mg
Current - Collector Cutoff (Max) :
20nA ICBO
Factory Lead Time :
15 Weeks
Terminal Finish :
Matte Tin (Sn)
REACH SVHC :
No SVHC
Peak Reflow Temperature (Cel) :
260
Length :
4.05mm
Manufacturer Package Identifier :
POWERDI-5
Published :
2010
Collector Base Voltage (VCBO) :
200V
Vce Saturation (Max) @ Ib, Ic :
220mV @ 500mA, 5A
Pbfree Code :
yes
Packaging :
Tape and Reel (TR)
Element Configuration :
Single
Height :
1.15mm
Collector Emitter Voltage (VCEO) :
100V
Transistor Application :
SWITCHING
Pin Count :
4
Time@Peak Reflow Temperature-Max (s) :
40
Max Power Dissipation :
3.2W
ECCN Code :
EAR99
Transition Frequency :
130MHz
Operating Temperature :
-55°C~150°C TJ
Gain Bandwidth Product :
130MHz
Terminal Form :
Flat
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Collector Current :
6A
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 2A 2V
Power Dissipation :
3.2W
JESD-609 Code :
e3
Width :
5.45mm
Max Breakdown Voltage :
100V
Number of Elements :
1
Package / Case :
PowerDI™ 5
Mounting Type :
Surface Mount
JEDEC-95 Code :
TO-252
Polarity/Channel Type :
NPN
Collector Emitter Saturation Voltage :
220mV
Base Part Number :
DXT2011P5
Collector Emitter Breakdown Voltage :
100V
Transistor Type :
NPN
Number of Terminations :
3
Qualification Status :
Not Qualified
Max Collector Current :
6A
Frequency :
130MHz
Emitter Base Voltage (VEBO) :
7V
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DXT2011P5-13 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:PowerDI™ 5, Mounting Type:Surface Mount, Base Part Number:DXT2011P5, Number of Terminations:3, DXT2011P5-13 pinout, DXT2011P5-13 datasheet PDF, DXT2011P5-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DXT2011P5-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DXT2011P5-13


NPN -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN PowerDI™ 5 Tape & Reel (TR) Surface Mount

DXT2011P5-13 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 2A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 220mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 220mV @ 500mA, 5A.Continuous collector voltages of 6A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 130MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 6A volts.

DXT2011P5-13 Features


the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 220mV
the vce saturation(Max) is 220mV @ 500mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 130MHz


DXT2011P5-13 Applications


There are a lot of Diodes Incorporated
DXT2011P5-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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