DXT2011P5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

100V

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-252

Package / Case :

PowerDI™ 5

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Element Configuration :

Single

Terminal Position :

Dual

Transistor Element Material :

SILICON

Number of Elements :

1

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

100V

Terminal Form :

Flat

Collector Emitter Saturation Voltage :

220mV

Width :

5.45mm

Max Power Dissipation :

3.2W

Max Breakdown Voltage :

100V

Max Collector Current :

6A

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Weight :

95.991485mg

Number of Pins :

3

Base Part Number :

DXT2011P5

Factory Lead Time :

15 Weeks

Collector Base Voltage (VCBO) :

200V

Current - Collector Cutoff (Max) :

20nA ICBO

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

7V

Height :

1.15mm

Manufacturer Package Identifier :

POWERDI-5

Polarity/Channel Type :

NPN

Continuous Collector Current :

6A

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Length :

4.05mm

Frequency :

130MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Power Dissipation :

3.2W

Vce Saturation (Max) @ Ib, Ic :

220mV @ 500mA, 5A

Packaging :

Tape and Reel (TR)

Pin Count :

4

Transistor Type :

NPN

Transition Frequency :

130MHz

Gain Bandwidth Product :

130MHz

Qualification Status :

Not Qualified