DXT2013P5-13
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- Mfr.Part #
- DXT2013P5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A POWERDI5
- Stock
- 16,738
- In Stock ：
- 16,738
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- -5A
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Pbfree Code :
- yes
- Package / Case :
- PowerDI™ 5
- Max Power Dissipation :
- 3.2W
- Case Connection :
- COLLECTOR
- Pin Count :
- 4
- Gain Bandwidth Product :
- 125MHz
- Collector Base Voltage (VCBO) :
- 140V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 125MHz
- Published :
- 2012
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Collector Current :
- 5A
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 400mA, 4A
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-F3
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -7V
- Terminal Form :
- Flat
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 100V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 3.2W
- Number of Pins :
- 5
- Number of Elements :
- 1
- Factory Lead Time :
- 15 Weeks
- Base Part Number :
- DXT2013P5
- Frequency :
- 125MHz
- Terminal Position :
- Dual
- Weight :
- 95.991485mg
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 100V
- Collector Emitter Saturation Voltage :
- -340mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Datasheets
- DXT2013P5-13
DXT2013P5-13 Documents
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT2013P5-13 Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -340mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
DXT2013P5-13 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -340mV
the vce saturation(Max) is 340mV @ 400mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 125MHz
DXT2013P5-13 Applications
There are a lot of Diodes Incorporated
DXT2013P5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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