DXT2013P5-13
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- Mfr.Part #
- DXT2013P5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A POWERDI5
- Stock
- 16,738
- In Stock ：
- 16,738
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 400mA, 4A
- Continuous Collector Current :
- -5A
- Transition Frequency :
- 125MHz
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Pin Count :
- 4
- Factory Lead Time :
- 15 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Terminal Position :
- Dual
- Weight :
- 95.991485mg
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 125MHz
- Package / Case :
- PowerDI™ 5
- Collector Base Voltage (VCBO) :
- 140V
- Base Part Number :
- DXT2013P5
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Max Power Dissipation :
- 3.2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2012
- JESD-30 Code :
- R-PDSO-F3
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 5A
- Power Dissipation :
- 3.2W
- Terminal Form :
- Flat
- Emitter Base Voltage (VEBO) :
- -7V
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 5
- Collector Emitter Saturation Voltage :
- -340mV
- Frequency :
- 125MHz
- Collector Emitter Voltage (VCEO) :
- 100V
- Datasheets
- DXT2013P5-13
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT2013P5-13 Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -340mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
DXT2013P5-13 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -340mV
the vce saturation(Max) is 340mV @ 400mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 125MHz
DXT2013P5-13 Applications
There are a lot of Diodes Incorporated
DXT2013P5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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