DXT2013P5-13
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- Mfr.Part #
- DXT2013P5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A POWERDI5
- Stock
- 16,738
- In Stock ：
- 16,738
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 3.2W
- Polarity/Channel Type :
- PNP
- Weight :
- 95.991485mg
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 400mA, 4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Flat
- Published :
- 2012
- REACH SVHC :
- No SVHC
- Package / Case :
- PowerDI™ 5
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 140V
- Mount :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Frequency :
- 125MHz
- Number of Pins :
- 5
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Continuous Collector Current :
- -5A
- Collector Emitter Saturation Voltage :
- -340mV
- Gain Bandwidth Product :
- 125MHz
- Pbfree Code :
- yes
- Base Part Number :
- DXT2013P5
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Terminations :
- 3
- Pin Count :
- 4
- Transition Frequency :
- 125MHz
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Collector Current :
- 5A
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- -7V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PDSO-F3
- Max Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 3.2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Datasheets
- DXT2013P5-13
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT2013P5-13 Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -340mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
DXT2013P5-13 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -340mV
the vce saturation(Max) is 340mV @ 400mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 125MHz
DXT2013P5-13 Applications
There are a lot of Diodes Incorporated
DXT2013P5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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