DXT2010P5-13
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- Mfr.Part #
- DXT2010P5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS NPN 60V 6A POWERDI5
- Stock
- 10,399
- In Stock ：
- 10,399
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 7V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 3.2W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Frequency :
- 130MHz
- Gain Bandwidth Product :
- 130MHz
- JEDEC-95 Code :
- TO-252
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 130MHz
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Base Part Number :
- DXT2010P5
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 60V
- Pin Count :
- 4
- Length :
- 4.05mm
- Continuous Collector Current :
- 6A
- Package / Case :
- PowerDI™ 5
- Collector Base Voltage (VCBO) :
- 150V
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 6A
- Weight :
- 95.991485mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 3.2W
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 300mA, 6A
- Height :
- 1.15mm
- Width :
- 5.45mm
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 60V
- Published :
- 2012
- Terminal Position :
- Dual
- Manufacturer Package Identifier :
- POWERDI-5
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 260mV
- Factory Lead Time :
- 15 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- DXT2010P5-13
NPN -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT2010P5-13 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 2A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 260mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 260mV @ 300mA, 6A.Single BJT transistor is recommended to keep the continuous collector voltage at 6A in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 130MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
DXT2010P5-13 Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 260mV @ 300mA, 6A
the emitter base voltage is kept at 7V
a transition frequency of 130MHz
DXT2010P5-13 Applications
There are a lot of Diodes Incorporated
DXT2010P5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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