DXT2010P5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

3.2W

Base Part Number :

DXT2010P5

Published :

2012

Case Connection :

COLLECTOR

Peak Reflow Temperature (Cel) :

260

JEDEC-95 Code :

TO-252

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 1V

Collector Base Voltage (VCBO) :

150V

Operating Temperature :

-55°C~150°C TJ

Height :

1.15mm

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

7V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Element Configuration :

Single

JESD-609 Code :

e3

Radiation Hardening :

No

Number of Pins :

3

Collector Emitter Breakdown Voltage :

60V

Collector Emitter Saturation Voltage :

260mV

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

PowerDI™ 5

Pin Count :

4

Max Collector Current :

6A

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

Continuous Collector Current :

6A

Collector Emitter Voltage (VCEO) :

60V

Manufacturer Package Identifier :

POWERDI-5

Packaging :

Tape and Reel (TR)

Power Dissipation :

3.2W

Vce Saturation (Max) @ Ib, Ic :

260mV @ 300mA, 6A

Number of Elements :

1

Frequency :

130MHz

Width :

5.45mm

Number of Terminations :

3

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Factory Lead Time :

15 Weeks

Max Breakdown Voltage :

60V

Length :

4.05mm

Current - Collector Cutoff (Max) :

20nA ICBO

Mount :

Surface Mount

REACH SVHC :

No SVHC

Gain Bandwidth Product :

130MHz

Transition Frequency :

130MHz

Terminal Position :

Dual

Weight :

95.991485mg