DXT2010P5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

Dual

Length :

4.05mm

Mount :

Surface Mount

Transistor Type :

NPN

Transistor Element Material :

SILICON

Max Collector Current :

6A

JESD-609 Code :

e3

Case Connection :

COLLECTOR

REACH SVHC :

No SVHC

Max Power Dissipation :

3.2W

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

150V

Number of Elements :

1

Base Part Number :

DXT2010P5

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

130MHz

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

60V

ECCN Code :

EAR99

Published :

2012

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

260mV @ 300mA, 6A

Power Dissipation :

3.2W

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

7V

Factory Lead Time :

15 Weeks

Current - Collector Cutoff (Max) :

20nA ICBO

Collector Emitter Saturation Voltage :

260mV

Transition Frequency :

130MHz

Frequency :

130MHz

Collector Emitter Voltage (VCEO) :

60V

Manufacturer Package Identifier :

POWERDI-5

Continuous Collector Current :

6A

Package / Case :

PowerDI™ 5

JEDEC-95 Code :

TO-252

Pin Count :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 1V

Max Breakdown Voltage :

60V

Transistor Application :

SWITCHING

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Width :

5.45mm

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Flat

Height :

1.15mm

Weight :

95.991485mg