DTC124ECAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Factory Lead Time :

13 Weeks

Terminal Form :

Gull wing

Resistor - Emitter Base (R2) :

22 k Ω

JESD-30 Code :

R-PDSO-G3

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Pbfree Code :

yes

JESD-609 Code :

e1

Qualification Status :

Not Qualified

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Mount :

Surface Mount

Frequency - Transition :

250MHz

Number of Elements :

1

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Resistor - Base (R1) :

22 k Ω

Number of Terminations :

3

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

300mV

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

VCEsat-Max :

0.3 V

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500nA

Transition Frequency :

250MHz

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Operating Temperature (Max) :

150°C

Published :

2016

Max Breakdown Voltage :

50V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.21.00.75

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Time@Peak Reflow Temperature-Max (s) :

10

Max Power Dissipation :

200mW

Power - Max :

200mW

Polarity/Channel Type :

NPN