DTC123JEBMGTL

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Mfr.Part #
DTC123JEBMGTL
Manufacturer
ROHM Semiconductor
Package / Case
SC-89, SOT-490
Datasheet
Download
Description
TRANS NPN 100MA 50V SC-89
Stock
45,044
In Stock :
45,044

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single, Pre-Biased
VCBO :
50V
Frequency - Transition :
250 MHz
DC current gain hFE :
80
Base Product Number :
DTC123
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Power dissipation Pd :
187mW
Collector-emitter saturation voltage :
250mV
Collector-emitter maximum voltage VCEO :
50V
Resistor - Emitter Base (R2) :
47 kOhms
Series :
DTC123J
Voltage - Collector Emitter Breakdown (Max) :
50 V
Mounting Type :
Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Package / Case :
SC-89, SOT-490
R2 :
47k Ohms
R1 :
10K Ohms
Package/Enclosure :
SOT-363
Resistor - Base (R1) :
2.2 kOhms
Supplier Device Package :
EMT3F (SOT-416FL)
Current - Collector Cutoff (Max) :
500nA
Transistor Type :
NPN - Pre-Biased
Current - Collector (Ic) (Max) :
100 mA
Collector continuous current :
100mA
Product Status :
Active
Package :
Tape and Reel (TR)
Power - Max :
150 mW
Datasheets
DTC123JEBMGTL
Introducing Transistors - Bipolar (BJT) - Single, Pre-Biased ROHM Semiconductor DTC123JEBMGTL from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:SC-89, SOT-490, DTC123JEBMGTL pinout, DTC123JEBMGTL datasheet PDF, DTC123JEBMGTL amp .Beyond Transistors - Bipolar (BJT) - Single, Pre-Biased ROHM Semiconductor DTC123JEBMGTL ,we also offer MMUN2211LT1G, MMUN2214LT1G, MMUN2233LT1G, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor DTC123JEBMGTL


NPN - Pre-Biased 500nA SC-89, SOT-490 Surface Mount

DTC123JEBMGTL Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 10mA, 5V.The resistor is a passive electrical component that creates resistance in the flow of electric current,and the resistor - Emitter Base (R2) of this device is 47 kOhms.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 250µA, 5mA.EMT3F (SOT-416FL) is the supplier device package for this product.This device displays a 50 V maximum voltage - Collector Emitter Breakdown.

DTC123JEBMGTL Features


the DC current gain for this device is 80 @ 10mA, 5V
the resistor - Emitter Base (R2) of this device is 47 kOhms
the vce saturation(Max) is 300mV @ 250µA, 5mA
the supplier device package of EMT3F (SOT-416FL)


DTC123JEBMGTL Applications


There are a lot of ROHM Semiconductor
DTC123JEBMGTL applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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