DTC123JCAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Factory Lead Time :

13 Weeks

Published :

2006

Number of Terminations :

3

Transistor Application :

SWITCHING

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

300mV

Max Power Dissipation :

200mW

VCEsat-Max :

0.3 V

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

2.2 k Ω

Collector Emitter Breakdown Voltage :

50V

Reach Compliance Code :

not_compliant

Operating Temperature (Max) :

150°C

HTS Code :

8541.21.00.75

JESD-30 Code :

R-PDSO-G3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN - Pre-Biased

Terminal Form :

Gull wing

Resistor - Emitter Base (R2) :

47 k Ω

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 21.36

ECCN Code :

EAR99

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Qualification Status :

Not Qualified

Number of Elements :

1

Power - Max :

200mW

Transition Frequency :

250MHz

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

500nA

Pin Count :

3

Frequency - Transition :

250MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED