DTA143ECAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

HTS Code :

8541.21.00.75

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Type :

PNP - Pre-Biased

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Frequency - Transition :

250MHz

Collector Emitter Voltage (VCEO) :

300mV

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Mount :

Surface Mount

Max Collector Current :

100mA

VCEsat-Max :

0.3 V

Terminal Position :

Dual

Reach Compliance Code :

not_compliant

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

4.7 k Ω

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA 5V

ECCN Code :

EAR99

Operating Temperature (Max) :

150°C

Resistor - Emitter Base (R2) :

4.7 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

200mW

JESD-30 Code :

R-PDSO-G3

Max Breakdown Voltage :

50V

Transition Frequency :

250MHz

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Power - Max :

200mW

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Published :

2015

Package / Case :

TO-236-3, SC-59, SOT-23-3

Factory Lead Time :

13 Weeks