DTA123JMT2L

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Copper (Sn/Cu)

Package / Case :

SOT-723

JESD-609 Code :

e2

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Max Breakdown Voltage :

50V

Base Part Number :

DTA123

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Max Power Dissipation :

150mW

Transition Frequency :

250MHz

Terminal Position :

Dual

Terminal Form :

Flat

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Frequency - Transition :

250MHz

Operating Supply Voltage :

50V

Resistor - Emitter Base (R2) :

47 k Ω

Min Operating Temperature :

-55°C

HTS Code :

8541.21.00.75

Factory Lead Time :

13 Weeks

Contact Plating :

Copper, Tin

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21

Element Configuration :

Single

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

300mV

Number of Pins :

3

Pin Count :

3

Published :

2009

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Pbfree Code :

yes

Number of Terminations :

3

Lead Free :

Lead Free

Radiation Hardening :

No

hFE Min :

80

Transistor Type :

PNP - Pre-Biased

Current Rating :

-100mA

Resistor - Base (R1) :

2.2 k Ω

Polarity :

PNP

Max Operating Temperature :

150°C

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Application :

SWITCHING

Max Output Current :

100mA

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-50V