DTA123JET1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Collector Emitter Breakdown Voltage :

50V

Voltage - Rated DC :

-50V

Power Dissipation :

200mW

Polarity :

PNP

Terminal Form :

Gull wing

Min Operating Temperature :

-55°C

Published :

2009

Max Power Dissipation :

200mW

Resistor - Emitter Base (R2) :

47 k Ω

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

500nA

Radiation Hardening :

No

Resistor - Base (R1) :

2.2 k Ω

Transistor Application :

SWITCHING

Factory Lead Time :

5 Weeks

Surface Mount :

yes

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Element Configuration :

Single

Terminal Position :

Dual

Base Part Number :

DTA123

Continuous Collector Current :

100mA

Max Collector Current :

100mA

Number of Elements :

1

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-100mA

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Transistor Type :

PNP - Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Number of Terminations :

3

Number of Pins :

3

Pbfree Code :

yes

Package / Case :

SC-75, SOT-416

hFE Min :

80

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free