DTA115EET1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Position :

Dual

Resistor - Base (R1) :

100 k Ω

Number of Elements :

1

Current - Collector Cutoff (Max) :

500nA

Mounting Type :

Surface Mount

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

PNP

Surface Mount :

yes

Factory Lead Time :

2 Weeks

Transistor Type :

PNP - Pre-Biased

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

JESD-609 Code :

e3

Base Part Number :

DTA115

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Element Configuration :

Single

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Voltage - Rated DC :

-50V

Package / Case :

SC-75, SOT-416

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Collector Emitter Breakdown Voltage :

50V

Power Dissipation :

200mW

Pin Count :

3

Number of Terminations :

3

Number of Pins :

3

Resistor - Emitter Base (R2) :

100 k Ω

Max Power Dissipation :

200mW

ECCN Code :

EAR99

Continuous Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Pbfree Code :

yes

Halogen Free :

Halogen Free

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

50V

Current Rating :

-100mA

hFE Min :

80

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)