DTA115ECAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Operating Temperature (Max) :

150°C

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

HTS Code :

8541.21.00.75

Resistor - Base (R1) :

100 k Ω

Max Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Breakdown Voltage :

50V

Power - Max :

200mW

Pin Count :

3

Mounting Type :

Surface Mount

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

300mV

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Factory Lead Time :

13 Weeks

Current - Collector Cutoff (Max) :

500nA

Qualification Status :

Not Qualified

VCEsat-Max :

0.3 V

Published :

2015

Polarity/Channel Type :

PNP

Max Power Dissipation :

200mW

Frequency - Transition :

250MHz

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G3

Terminal Form :

Gull wing

Transistor Type :

PNP - Pre-Biased

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 5mA 5V

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Resistor - Emitter Base (R2) :

100 k Ω

Transition Frequency :

250MHz

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Collector Current :

100mA