DTA114YM3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

10 k Ω

Lead Free :

Lead Free

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Power Dissipation :

260mW

Transistor Application :

SWITCHING

Max Collector Current :

100mA

Resistor - Emitter Base (R2) :

47 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Polarity :

PNP

Terminal Finish :

Tin (Sn)

Factory Lead Time :

2 Weeks

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Current - Collector Cutoff (Max) :

500nA

hFE Min :

80

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Voltage - Rated DC :

-50V

Published :

2009

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

SOT-723

Max Power Dissipation :

260mW

Continuous Collector Current :

100mA

Current Rating :

-100mA

Number of Elements :

1

Pbfree Code :

yes

Radiation Hardening :

No

Transistor Type :

PNP - Pre-Biased

Element Configuration :

Single

Pin Count :

3

Base Part Number :

DTA114

Terminal Form :

Flat

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Number of Pins :

3

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Max Operating Temperature :

150°C