DTA114WUAT106

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Current Rating :

-100mA

Max Operating Temperature :

150°C

Base Part Number :

DTA114

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

300mV

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 0.47

Resistor - Base (R1) :

10 k Ω

Resistor - Emitter Base (R2) :

4.7 k Ω

ECCN Code :

EAR99

hFE Min :

24

Continuous Collector Current :

-100mA

Transistor Type :

PNP - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

24 @ 10mA 5V

Number of Elements :

1

Min Operating Temperature :

-55°C

Terminal Form :

Gull wing

Polarity :

PNP

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500nA

Peak Reflow Temperature (Cel) :

260

HTS Code :

8541.21.00.75

Terminal Finish :

TIN SILVER COPPER

Mount :

Surface Mount

Package / Case :

SC-70, SOT-323

Max Collector Current :

100mA

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Transition Frequency :

250MHz

Terminal Position :

Dual

Frequency - Transition :

250MHz

Pin Count :

3

Lead Free :

Lead Free

Factory Lead Time :

13 Weeks

Time@Peak Reflow Temperature-Max (s) :

10

JESD-609 Code :

e1

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

50V

Voltage - Rated DC :

-50V

Max Power Dissipation :

200mW

Number of Pins :

3

Pbfree Code :

yes

Power Dissipation :

200mW