DSS5540X-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

-6V

Polarity/Channel Type :

PNP

Transistor Type :

PNP

Collector Emitter Voltage (VCEO) :

375mV

JESD-30 Code :

R-PSSO-F3

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-243AA

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

375mV @ 500mA, 5A

Transition Frequency :

60MHz

Max Collector Current :

4A

Radiation Hardening :

No

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Continuous Collector Current :

-4A

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

-40V

Gain Bandwidth Product :

60MHz

Max Breakdown Voltage :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

15 Weeks

Power - Max :

900mW

Collector Emitter Breakdown Voltage :

40V

ECCN Code :

EAR99

Pin Count :

3

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Published :

2016

Terminal Form :

Flat

Case Connection :

COLLECTOR

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Pbfree Code :

yes

Element Configuration :

Single

Max Power Dissipation :

900mW

Number of Pins :

4