DSA9G01C0L

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON

DC Current Gain-Min (hFE) :

110

Max Operating Temperature :

150°C

Max Power Dissipation :

125mW

Element Configuration :

Single

Max Collector Current :

30mA

Continuous Collector Current :

-30mA

Height :

600μm

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

-20V

Transition Frequency :

300MHz

HTS Code :

8541.21.00.75

Collector Emitter Saturation Voltage :

-100mV

Polarity :

NPN

Number of Pins :

3

Length :

1.6mm

Emitter Base Voltage (VEBO) :

-5V

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Number of Terminations :

3

hFE Min :

70

Width :

850μm

Terminal Position :

Dual

Max Frequency :

300MHz

Terminal Form :

Flat

Collector Base Voltage (VCBO) :

-30V

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2011

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED