DRA3114T0L

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Base (R1) :

10 k Ω

Collector Emitter Breakdown Voltage :

50V

Published :

2016

Number of Elements :

1

Mounting Type :

Surface Mount

Max Power Dissipation :

100mW

Max Operating Temperature :

150°C

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

800μm

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Base Part Number :

DRA3114

Collector Emitter Saturation Voltage :

-250mV

Number of Pins :

3

Factory Lead Time :

10 Weeks

Terminal Form :

Flat

Polarity :

PNP

Height :

470μm

HTS Code :

8541.21.00.95

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

SOT-723

Mount :

Surface Mount

Max Breakdown Voltage :

50V

Additional Feature :

BUILT IN BIAS RESISTOR

Collector Emitter Voltage (VCEO) :

-50V

Reach Compliance Code :

Unknown

Number of Terminations :

3

Continuous Collector Current :

-100mA

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Max Collector Current :

100mA

Length :

1.2mm

Transistor Type :

PNP - Pre-Biased