DRA3114T0L

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Breakdown Voltage :

50V

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity :

PNP

Terminal Form :

Flat

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Saturation Voltage :

-250mV

Continuous Collector Current :

-100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Additional Feature :

BUILT IN BIAS RESISTOR

Number of Elements :

1

Height :

470μm

Terminal Position :

Dual

RoHS Status :

RoHS Compliant

Factory Lead Time :

10 Weeks

Reach Compliance Code :

Unknown

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Published :

2016

Length :

1.2mm

Width :

800μm

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

HTS Code :

8541.21.00.95

Max Power Dissipation :

100mW

Package / Case :

SOT-723

Max Operating Temperature :

150°C

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mount :

Surface Mount

Transistor Type :

PNP - Pre-Biased

Max Collector Current :

100mA

Resistor - Base (R1) :

10 k Ω

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

-50V

Base Part Number :

DRA3114