DRA3114T0L

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

RoHS Status :

RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Terminal Position :

Dual

Max Breakdown Voltage :

50V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

800μm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2016

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

3

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Terminal Form :

Flat

Transistor Type :

PNP - Pre-Biased

Packaging :

Tape and Reel (TR)

Length :

1.2mm

Mount :

Surface Mount

Number of Elements :

1

Base Part Number :

DRA3114

Additional Feature :

BUILT IN BIAS RESISTOR

Current - Collector Cutoff (Max) :

500nA

Transistor Application :

SWITCHING

Max Power Dissipation :

100mW

Collector Emitter Saturation Voltage :

-250mV

Reach Compliance Code :

Unknown

Resistor - Base (R1) :

10 k Ω

Element Configuration :

Single

Max Operating Temperature :

150°C

Package / Case :

SOT-723

HTS Code :

8541.21.00.95

Polarity :

PNP

Transistor Element Material :

SILICON

Max Collector Current :

100mA

Height :

470μm

Collector Emitter Voltage (VCEO) :

-50V

Continuous Collector Current :

-100mA

Factory Lead Time :

10 Weeks