DRA3123J0L

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

500nA

Width :

800μm

Terminal Form :

Flat

Transistor Element Material :

SILICON

Max Power Dissipation :

100mW

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Published :

2009

Polarity :

PNP

Mount :

Surface Mount

Base Part Number :

DRA3123

Max Collector Current :

100mA

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Mounting Type :

Surface Mount

Continuous Collector Current :

-100mA

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

RoHS Compliant

Transistor Type :

PNP - Pre-Biased

Reach Compliance Code :

Unknown

Height :

470μm

Collector Emitter Saturation Voltage :

-250mV

Resistor - Emitter Base (R2) :

47 k Ω

Collector Emitter Voltage (VCEO) :

-50V

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Resistor - Base (R1) :

2.2 k Ω

Package / Case :

SOT-723

HTS Code :

8541.21.00.95

Number of Terminations :

3

Max Operating Temperature :

150°C

Max Breakdown Voltage :

50V

Length :

1.2mm

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Transistor Application :

SWITCHING