DRA3114E0L

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Saturation Voltage :

250mV

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Contact Plating :

Tin

Max Collector Current :

100mA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

RoHS Status :

RoHS Compliant

Factory Lead Time :

10 Weeks

Emitter Base Voltage (VEBO) :

-6V

Terminal Position :

Dual

Resistor - Base (R1) :

10 k Ω

Max Power Dissipation :

100mW

Number of Pins :

3

Max Operating Temperature :

150°C

Polarity :

PNP

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

-100mA

Reach Compliance Code :

Unknown

Base Part Number :

DRA3114

Current - Collector Cutoff (Max) :

500nA

Mount :

Surface Mount

Number of Terminations :

3

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Min Operating Temperature :

-40°C

Published :

2009

Collector Emitter Voltage (VCEO) :

50V

Transistor Type :

PNP - Pre-Biased

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Length :

1.2mm

Height :

500μm

Resistor - Emitter Base (R2) :

10 k Ω

ECCN Code :

EAR99

Terminal Form :

Flat

HTS Code :

8541.21.00.95

Package / Case :

SOT-723

Transistor Application :

SWITCHING

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

50V