DRA3114E0L

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Emitter Base Voltage (VEBO) :

-6V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Contact Plating :

Tin

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Collector Current :

-100mA

Max Power Dissipation :

100mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

HTS Code :

8541.21.00.95

Published :

2009

Number of Elements :

1

Resistor - Base (R1) :

10 k Ω

Transistor Type :

PNP - Pre-Biased

Factory Lead Time :

10 Weeks

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

Max Collector Current :

100mA

Number of Terminations :

3

Height :

500μm

Min Operating Temperature :

-40°C

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

50V

Mounting Type :

Surface Mount

Polarity :

PNP

Terminal Form :

Flat

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Number of Pins :

3

Base Part Number :

DRA3114

RoHS Status :

RoHS Compliant

Collector Emitter Saturation Voltage :

250mV

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Breakdown Voltage :

50V

Length :

1.2mm

Resistor - Emitter Base (R2) :

10 k Ω

Element Configuration :

Single

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Package / Case :

SOT-723