DRA3114E0L
- Mfr.Part #
- DRA3114E0L
- Manufacturer
- Panasonic
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PREBIAS PNP 100MW SSSMINI3
- Stock
- 7,492
- In Stock :
- 7,492
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Emitter Base Voltage (VEBO) :
- -6V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Collector Current :
- -100mA
- Max Power Dissipation :
- 100mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 50V
- HTS Code :
- 8541.21.00.95
- Published :
- 2009
- Number of Elements :
- 1
- Resistor - Base (R1) :
- 10 k Ω
- Transistor Type :
- PNP - Pre-Biased
- Factory Lead Time :
- 10 Weeks
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Max Operating Temperature :
- 150°C
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Height :
- 500μm
- Min Operating Temperature :
- -40°C
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 500nA
- Collector Emitter Voltage (VCEO) :
- 50V
- Mounting Type :
- Surface Mount
- Polarity :
- PNP
- Terminal Form :
- Flat
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 35 @ 5mA 10V
- Number of Pins :
- 3
- Base Part Number :
- DRA3114
- RoHS Status :
- RoHS Compliant
- Collector Emitter Saturation Voltage :
- 250mV
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Breakdown Voltage :
- 50V
- Length :
- 1.2mm
- Resistor - Emitter Base (R2) :
- 10 k Ω
- Element Configuration :
- Single
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 1
- Package / Case :
- SOT-723
- Datasheets
- DRA3114E0L

DRA3114E0L datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Panasonic Electronic Components stock available at
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