DN350T05-7
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- Mfr.Part #
- DN350T05-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A SOT23-3
- Stock
- 2,227
- In Stock ：
- 2,227
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 350V
- Collector Emitter Breakdown Voltage :
- 350V
- Transistor Element Material :
- SILICON
- Frequency :
- 50MHz
- Element Configuration :
- Single
- Published :
- 2005
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 500mA
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation :
- 300mW
- Length :
- 3.05mm
- Gain Bandwidth Product :
- 50MHz
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Pin Count :
- 3
- Transition Frequency :
- 50MHz
- Current Rating :
- 500mA
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 350V
- Radiation Hardening :
- No
- Width :
- 1.4mm
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 1V
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Base Part Number :
- DN350T05
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Factory Lead Time :
- 15 Weeks
- Voltage - Rated DC :
- 350V
- ECCN Code :
- EAR99
- Height :
- 1mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Max Power Dissipation :
- 300mW
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Additional Feature :
- High Reliability
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 350V
- Weight :
- 7.994566mg
- Datasheets
- DN350T05-7
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DN350T05-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 50mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 5mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 350V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
DN350T05-7 Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz
DN350T05-7 Applications
There are a lot of Diodes Incorporated
DN350T05-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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