DN3545N8-G

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Mfr.Part #
DN3545N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 450V 200MA TO243AA
Stock
61,200
In Stock :
61,200

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation (Max) :
1.6W (Ta)
Height :
1.6mm
Reach Compliance Code :
Compliant
Packaging :
Tape and Reel (TR)
Drain Current-Max (Abs) (ID) :
0.2A
Package / Case :
TO-243AA
Rise Time :
30ns
Turn-Off Delay Time :
30 ns
Terminal Position :
Single
Product Status :
Active
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Transistor Type :
1 N-Channel
Channel Mode :
Depletion
JEDEC-95 Code :
TO-243AA
Terminal Form :
Flat
DS Breakdown Voltage-Min :
450 V
Product Type :
MOSFET
Transistor Application :
SWITCHING
Mounting Style :
SMD/SMT
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
200mA
Drain to Source Voltage (Vdss) :
450V
Additional Feature :
FAST SWITCHING
Length :
4.6mm
Time@Peak Reflow Temperature-Max (s) :
40
Manufacturer :
Microchip
Product Category :
MOSFET
Element Configuration :
Single
Number of Terminals :
3
Drain to Source Breakdown Voltage :
450V
Pulsed Drain Current-Max (IDM) :
0.3A
Published :
2005
Current - Continuous Drain (Id) @ 25°C :
200mA
Width :
2.6mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
--
Peak Reflow Temperature (Cel) :
260
Number of Channels :
1
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
Number of Elements :
1
Base Product Number :
DN3545
Minimum Operating Temperature :
- 55 C
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
20 Ω
Series :
--
Power Dissipation-Max (Abs) :
1.6 W
FET Feature :
Depletion Mode
Configuration :
Single
Number of Terminations :
3
Radiation Hardening :
No
Rds On (Max) @ Id, Vgs :
20 Ω @ 150mA, 0V
Power Dissipation :
1.6W
Input Capacitance (Ciss) (Max) @ Vds :
360pF @ 25V
Factory Lead Time :
6 Weeks
Contact Plating :
Tin
MSL :
MSL 1 - Unlimited
Continuous Drain Current Id :
200
Channel Type :
N
JESD-609 Code :
e3
Lead Free :
Lead Free
Product :
MOSFET Small Signal
RoHS Status :
ROHS3 Compliant
Surface Mount :
yes
Maximum Operating Temperature :
+ 150 C
Mounting Type :
Surface Mount
Case Connection :
DRAIN
Fall Time (Typ) :
30 ns
JESD-30 Code :
R-PSSO-F3
Mount :
Surface Mount
Qualification :
-
Package Shape :
RECTANGULAR
Power Dissipation-Max :
1.6W Ta
Operating Mode :
Depletion Mode
RoHS :
Details
Vgs (Max) :
±20V
Turn On Delay Time :
20 ns
Transistor Polarity :
N-Channel
Terminal Finish :
Matte Tin (Sn) - annealed
Number of Pins :
4
Type :
FET
Weight :
52.786812mg
FET Type :
N-Channel
Supplier Device Package :
TO-243AA (SOT-89)
REACH SVHC :
No SVHC
Drive Voltage (Max Rds On,Min Rds On) :
0V
Brand :
Microchip Technology / Atmel
ECCN Code :
EAR99
Datasheets
DN3545N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3545N8-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Surface Mount, Number of Pins:4, Type:FET, DN3545N8-G pinout, DN3545N8-G datasheet PDF, DN3545N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3545N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3545N8-G


N-Channel Tape & Reel (TR) 20 Ω @ 150mA, 0V ±20V 360pF @ 25V 450V TO-243AA

DN3545N8-G Overview


The maximum input capacitance of this device is 360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 200mA.When VGS=450V, and ID flows to VDS at 450VVDS, the drain-source breakdown voltage is 450V in this device.As shown in the table below, the drain current of this device is 0.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.3A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 450 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 450V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.

DN3545N8-G Features


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 450V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.3A.
a 450V drain to source voltage (Vdss)


DN3545N8-G Applications


There are a lot of Microchip Technology
DN3545N8-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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