DN3545N8-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

3

Configuration :

Single

Number of Channels :

1

Lead Free :

Lead Free

ECCN Code :

EAR99

Drain-source On Resistance-Max :

20 Ω

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-243AA

Power Dissipation :

1.6W

Vgs(th) (Max) @ Id :

--

FET Feature :

Depletion Mode

Length :

4.6mm

Operating Mode :

Depletion Mode

FET Type :

N-Channel

Product Category :

MOSFET

Factory Lead Time :

6 Weeks

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

450 V

REACH SVHC :

No SVHC

Surface Mount :

yes

Radiation Hardening :

No

Supplier Device Package :

TO-243AA (SOT-89)

Polarity/Channel Type :

N-Channel

Brand :

Microchip Technology / Atmel

Channel Mode :

Depletion

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

20 Ω @ 150mA, 0V

Mounting Style :

SMD/SMT

Drain Current-Max (Abs) (ID) :

0.2A

Manufacturer :

Microchip

Maximum Operating Temperature :

+ 150 C

Product Status :

Active

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

200mA

Height :

1.6mm

Product :

MOSFET Small Signal

Package / Case :

TO-243AA

Mount :

Surface Mount

Number of Pins :

4

JESD-30 Code :

R-PSSO-F3

Rise Time :

30ns

Additional Feature :

FAST SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

0V

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Drain to Source Breakdown Voltage :

450V

Type :

FET

Transistor Application :

SWITCHING

Transistor Type :

1 N-Channel

Published :

2005

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

200mA

Qualification :

-

Terminal Finish :

Matte Tin (Sn) - annealed

Drain to Source Voltage (Vdss) :

450V

Channel Type :

N

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

0.3A

Qualification Status :

Not Qualified

Fall Time (Typ) :

30 ns

Turn On Delay Time :

20 ns

Packaging :

Tape and Reel (TR)

Base Product Number :

DN3545

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max :

1.6W Ta

Width :

2.6mm

Power Dissipation (Max) :

1.6W (Ta)

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 25V

Weight :

52.786812mg

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Product Type :

MOSFET

Number of Terminations :

3

Continuous Drain Current Id :

200

Package Shape :

RECTANGULAR

Minimum Operating Temperature :

- 55 C

Contact Plating :

Tin

Mounting Type :

Surface Mount

MSL :

MSL 1 - Unlimited

Power Dissipation-Max (Abs) :

1.6 W

Turn-Off Delay Time :

30 ns

RoHS :

Details

Series :

--