DN3545N8-G
- Mfr.Part #
- DN3545N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 450V 200MA TO243AA
- Stock
- 61,200
- In Stock :
- 61,200
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 1.6W (Ta)
- Height :
- 1.6mm
- Reach Compliance Code :
- Compliant
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Package / Case :
- TO-243AA
- Rise Time :
- 30ns
- Turn-Off Delay Time :
- 30 ns
- Terminal Position :
- Single
- Product Status :
- Active
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Transistor Type :
- 1 N-Channel
- Channel Mode :
- Depletion
- JEDEC-95 Code :
- TO-243AA
- Terminal Form :
- Flat
- DS Breakdown Voltage-Min :
- 450 V
- Product Type :
- MOSFET
- Transistor Application :
- SWITCHING
- Mounting Style :
- SMD/SMT
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 200mA
- Drain to Source Voltage (Vdss) :
- 450V
- Additional Feature :
- FAST SWITCHING
- Length :
- 4.6mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Manufacturer :
- Microchip
- Product Category :
- MOSFET
- Element Configuration :
- Single
- Number of Terminals :
- 3
- Drain to Source Breakdown Voltage :
- 450V
- Pulsed Drain Current-Max (IDM) :
- 0.3A
- Published :
- 2005
- Current - Continuous Drain (Id) @ 25°C :
- 200mA
- Width :
- 2.6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- --
- Peak Reflow Temperature (Cel) :
- 260
- Number of Channels :
- 1
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Base Product Number :
- DN3545
- Minimum Operating Temperature :
- - 55 C
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 20 Ω
- Series :
- --
- Power Dissipation-Max (Abs) :
- 1.6 W
- FET Feature :
- Depletion Mode
- Configuration :
- Single
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 20 Ω @ 150mA, 0V
- Power Dissipation :
- 1.6W
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Factory Lead Time :
- 6 Weeks
- Contact Plating :
- Tin
- MSL :
- MSL 1 - Unlimited
- Continuous Drain Current Id :
- 200
- Channel Type :
- N
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Product :
- MOSFET Small Signal
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 30 ns
- JESD-30 Code :
- R-PSSO-F3
- Mount :
- Surface Mount
- Qualification :
- -
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max :
- 1.6W Ta
- Operating Mode :
- Depletion Mode
- RoHS :
- Details
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 20 ns
- Transistor Polarity :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Number of Pins :
- 4
- Type :
- FET
- Weight :
- 52.786812mg
- FET Type :
- N-Channel
- Supplier Device Package :
- TO-243AA (SOT-89)
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Brand :
- Microchip Technology / Atmel
- ECCN Code :
- EAR99
- Datasheets
- DN3545N8-G

N-Channel Tape & Reel (TR) 20 Ω @ 150mA, 0V ±20V 360pF @ 25V 450V TO-243AA
DN3545N8-G Overview
The maximum input capacitance of this device is 360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 200mA.When VGS=450V, and ID flows to VDS at 450VVDS, the drain-source breakdown voltage is 450V in this device.As shown in the table below, the drain current of this device is 0.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.3A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 450 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 450V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.
DN3545N8-G Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 450V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.3A.
a 450V drain to source voltage (Vdss)
DN3545N8-G Applications
There are a lot of Microchip Technology
DN3545N8-G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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