DN3545N3-G

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Mfr.Part #
DN3545N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 450V 136MA TO92
Stock
2,017
In Stock :
2,017

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
6 Weeks
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
740mW Ta
Surface Mount :
No
Drive Voltage (Max Rds On,Min Rds On) :
0V
Channel Type :
N
Drain to Source Voltage (Vdss) :
450V
Lead Free :
Lead Free
Height :
5.33mm
Product Status :
Active
Package Shape :
Round
RoHS :
Details
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
450 V
Drain-source On Resistance-Max :
20 Ω
Rise Time :
30ns
Qualification :
-
Published :
2010
Type :
FET
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Reach Compliance Code :
Compliant
Supplier Device Package :
TO-92 (TO-226)
Number of Elements per Chip :
1
Turn On Delay Time :
20 ns
Number of Elements :
1
Qualification Status :
Not Qualified
Vgs(th) (Max) @ Id :
--
Operating Temperature :
-55°C~150°C TJ
REACH SVHC :
No SVHC
JEDEC-95 Code :
TO-92
Package Type :
TO-92
Fall Time (Typ) :
30 ns
Maximum Operating Temperature :
+150 °C
JESD-30 Code :
O-PBCY-W3
Number of Terminations :
3
Power Dissipation-Max (Abs) :
0.74 W
Number of Channels :
1
Mount :
Through Hole
Series :
--
Transistor Type :
1 N-Channel
Weight :
453.59237mg
Current - Continuous Drain (Id) @ 25°C :
136mA
Product Type :
MOSFET
Vgs (Max) :
±20V
Manufacturer :
Microchip
ECCN Code :
EAR99
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation :
740mW
Terminal Form :
Wire
RoHS Status :
ROHS3 Compliant
FET Feature :
Depletion Mode
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Product Category :
MOSFET
Width :
4.19mm
Channel Mode :
Depletion
Number of Pins :
3
Operating Mode :
Depletion Mode
Configuration :
Single
HTS Code :
8541.21.00.95
Brand :
Microchip Technology / Atmel
Transistor Application :
SWITCHING
Feedback Cap-Max (Crss) :
15 pF
Peak Reflow Temperature (Cel) :
Not Applicable
Packaging :
Bulk
Drain to Source Breakdown Voltage :
450V
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Minimum Operating Temperature :
-55 °C
Mounting Style :
Through Hole
Terminal Position :
BOTTOM
Pin Count :
3
Product :
MOSFET Small Signal
MSL :
-
Continuous Drain Current Id :
136
Mounting Type :
Through Hole
Package :
Bag
JESD-609 Code :
e3
Base Product Number :
DN3545
Power Dissipation (Max) :
740mW (Ta)
Terminal Finish :
Matte Tin (Sn)
Additional Feature :
HIGH INPUT IMPEDANCE
Continuous Drain Current (ID) :
136mA
Transistor Polarity :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
360pF @ 25V
Number of Terminals :
3
Turn-Off Delay Time :
30 ns
Length :
5.21mm
Rds On (Max) @ Id, Vgs :
20 Ω @ 150mA, 0V
Element Configuration :
Single
Datasheets
DN3545N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3545N3-G from Chip IC,where excellence meets affordability. This product stands out with its Type:FET, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Pins:3, Mounting Type:Through Hole, DN3545N3-G pinout, DN3545N3-G datasheet PDF, DN3545N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3545N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3545N3-G


N-Channel Bulk 20 Ω @ 150mA, 0V ±20V 360pF @ 25V 450V TO-226-3, TO-92-3 (TO-226AA)

DN3545N3-G Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 360pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 450V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 450V.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 450 V, it should remain above the 450 V level.The transistor must receive a 450V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (0V).

DN3545N3-G Features


a continuous drain current (ID) of 136mA
a drain-to-source breakdown voltage of 450V voltage
the turn-off delay time is 30 ns
a 450V drain to source voltage (Vdss)


DN3545N3-G Applications


There are a lot of Microchip Technology
DN3545N3-G applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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