DN3545N3-G
- Mfr.Part #
- DN3545N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 450V 136MA TO92
- Stock
- 2,017
- In Stock :
- 2,017
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 6 Weeks
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max :
- 740mW Ta
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Channel Type :
- N
- Drain to Source Voltage (Vdss) :
- 450V
- Lead Free :
- Lead Free
- Height :
- 5.33mm
- Product Status :
- Active
- Package Shape :
- Round
- RoHS :
- Details
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 450 V
- Drain-source On Resistance-Max :
- 20 Ω
- Rise Time :
- 30ns
- Qualification :
- -
- Published :
- 2010
- Type :
- FET
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Supplier Device Package :
- TO-92 (TO-226)
- Number of Elements per Chip :
- 1
- Turn On Delay Time :
- 20 ns
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- --
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- JEDEC-95 Code :
- TO-92
- Package Type :
- TO-92
- Fall Time (Typ) :
- 30 ns
- Maximum Operating Temperature :
- +150 °C
- JESD-30 Code :
- O-PBCY-W3
- Number of Terminations :
- 3
- Power Dissipation-Max (Abs) :
- 0.74 W
- Number of Channels :
- 1
- Mount :
- Through Hole
- Series :
- --
- Transistor Type :
- 1 N-Channel
- Weight :
- 453.59237mg
- Current - Continuous Drain (Id) @ 25°C :
- 136mA
- Product Type :
- MOSFET
- Vgs (Max) :
- ±20V
- Manufacturer :
- Microchip
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power Dissipation :
- 740mW
- Terminal Form :
- Wire
- RoHS Status :
- ROHS3 Compliant
- FET Feature :
- Depletion Mode
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Product Category :
- MOSFET
- Width :
- 4.19mm
- Channel Mode :
- Depletion
- Number of Pins :
- 3
- Operating Mode :
- Depletion Mode
- Configuration :
- Single
- HTS Code :
- 8541.21.00.95
- Brand :
- Microchip Technology / Atmel
- Transistor Application :
- SWITCHING
- Feedback Cap-Max (Crss) :
- 15 pF
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Packaging :
- Bulk
- Drain to Source Breakdown Voltage :
- 450V
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Minimum Operating Temperature :
- -55 °C
- Mounting Style :
- Through Hole
- Terminal Position :
- BOTTOM
- Pin Count :
- 3
- Product :
- MOSFET Small Signal
- MSL :
- -
- Continuous Drain Current Id :
- 136
- Mounting Type :
- Through Hole
- Package :
- Bag
- JESD-609 Code :
- e3
- Base Product Number :
- DN3545
- Power Dissipation (Max) :
- 740mW (Ta)
- Terminal Finish :
- Matte Tin (Sn)
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Continuous Drain Current (ID) :
- 136mA
- Transistor Polarity :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Number of Terminals :
- 3
- Turn-Off Delay Time :
- 30 ns
- Length :
- 5.21mm
- Rds On (Max) @ Id, Vgs :
- 20 Ω @ 150mA, 0V
- Element Configuration :
- Single
- Datasheets
- DN3545N3-G
,TO-226_straightlead.jpg)
N-Channel Bulk 20 Ω @ 150mA, 0V ±20V 360pF @ 25V 450V TO-226-3, TO-92-3 (TO-226AA)
DN3545N3-G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 360pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 450V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 450V.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 450 V, it should remain above the 450 V level.The transistor must receive a 450V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (0V).
DN3545N3-G Features
a continuous drain current (ID) of 136mA
a drain-to-source breakdown voltage of 450V voltage
the turn-off delay time is 30 ns
a 450V drain to source voltage (Vdss)
DN3545N3-G Applications
There are a lot of Microchip Technology
DN3545N3-G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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