DN3545N3-G
- Mfr.Part #
- DN3545N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 450V 136MA TO92
- Stock
- 2,017
- In Stock :
- 2,017
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- TO-92 (TO-226)
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- FET Type :
- N-Channel
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Rise Time :
- 30ns
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 30 ns
- Operating Mode :
- Depletion Mode
- Drain-source On Resistance-Max :
- 20 Ω
- Qualification :
- -
- Number of Terminals :
- 3
- Power Dissipation :
- 740mW
- Terminal Form :
- Wire
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Product Type :
- MOSFET
- Power Dissipation-Max (Abs) :
- 0.74 W
- Packaging :
- Bulk
- Package :
- Bag
- Continuous Drain Current (ID) :
- 136mA
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current Id :
- 136
- JEDEC-95 Code :
- TO-92
- Feedback Cap-Max (Crss) :
- 15 pF
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Channel Mode :
- Depletion
- Terminal Position :
- BOTTOM
- Product :
- MOSFET Small Signal
- Lead Free :
- Lead Free
- Published :
- 2010
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Series :
- --
- Package Type :
- TO-92
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Number of Elements per Chip :
- 1
- Height :
- 5.33mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- Brand :
- Microchip Technology / Atmel
- Terminal Finish :
- Matte Tin (Sn)
- Package Shape :
- Round
- DS Breakdown Voltage-Min :
- 450 V
- Power Dissipation (Max) :
- 740mW (Ta)
- Product Category :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 450V
- Fall Time (Typ) :
- 30 ns
- Transistor Type :
- 1 N-Channel
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 20 Ω @ 150mA, 0V
- Drain to Source Breakdown Voltage :
- 450V
- Type :
- FET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 5.21mm
- Weight :
- 453.59237mg
- Number of Elements :
- 1
- Base Product Number :
- DN3545
- Factory Lead Time :
- 6 Weeks
- JESD-609 Code :
- e3
- Transistor Polarity :
- N-Channel
- MSL :
- -
- HTS Code :
- 8541.21.00.95
- Power Dissipation-Max :
- 740mW Ta
- Current - Continuous Drain (Id) @ 25°C :
- 136mA
- Number of Channels :
- 1
- Maximum Operating Temperature :
- +150 °C
- Vgs (Max) :
- ±20V
- Manufacturer :
- Microchip
- Mount :
- Through Hole
- FET Feature :
- Depletion Mode
- Vgs(th) (Max) @ Id :
- --
- Surface Mount :
- No
- JESD-30 Code :
- O-PBCY-W3
- Configuration :
- Single
- Minimum Operating Temperature :
- -55 °C
- Channel Type :
- N
- Number of Terminations :
- 3
- RoHS :
- Details
- Mounting Style :
- Through Hole
- Width :
- 4.19mm
- Turn On Delay Time :
- 20 ns
- Product Status :
- Active
- Datasheets
- DN3545N3-G
,TO-226_straightlead.jpg)
N-Channel Bulk 20 Ω @ 150mA, 0V ±20V 360pF @ 25V 450V TO-226-3, TO-92-3 (TO-226AA)
DN3545N3-G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 360pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 450V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 450V.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 450 V, it should remain above the 450 V level.The transistor must receive a 450V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (0V).
DN3545N3-G Features
a continuous drain current (ID) of 136mA
a drain-to-source breakdown voltage of 450V voltage
the turn-off delay time is 30 ns
a 450V drain to source voltage (Vdss)
DN3545N3-G Applications
There are a lot of Microchip Technology
DN3545N3-G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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