DN3545N3-G

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Mfr.Part #
DN3545N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 450V 136MA TO92
Stock
2,017
In Stock :
2,017

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-92 (TO-226)
Input Capacitance (Ciss) (Max) @ Vds :
360pF @ 25V
FET Type :
N-Channel
Additional Feature :
HIGH INPUT IMPEDANCE
Rise Time :
30ns
Number of Pins :
3
Turn-Off Delay Time :
30 ns
Operating Mode :
Depletion Mode
Drain-source On Resistance-Max :
20 Ω
Qualification :
-
Number of Terminals :
3
Power Dissipation :
740mW
Terminal Form :
Wire
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Product Type :
MOSFET
Power Dissipation-Max (Abs) :
0.74 W
Packaging :
Bulk
Package :
Bag
Continuous Drain Current (ID) :
136mA
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current Id :
136
JEDEC-95 Code :
TO-92
Feedback Cap-Max (Crss) :
15 pF
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
0V
Channel Mode :
Depletion
Terminal Position :
BOTTOM
Product :
MOSFET Small Signal
Lead Free :
Lead Free
Published :
2010
REACH SVHC :
No SVHC
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
Qualification Status :
Not Qualified
Series :
--
Package Type :
TO-92
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
Not Applicable
Number of Elements per Chip :
1
Height :
5.33mm
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Reach Compliance Code :
Compliant
Pin Count :
3
Brand :
Microchip Technology / Atmel
Terminal Finish :
Matte Tin (Sn)
Package Shape :
Round
DS Breakdown Voltage-Min :
450 V
Power Dissipation (Max) :
740mW (Ta)
Product Category :
MOSFET
Drain to Source Voltage (Vdss) :
450V
Fall Time (Typ) :
30 ns
Transistor Type :
1 N-Channel
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
20 Ω @ 150mA, 0V
Drain to Source Breakdown Voltage :
450V
Type :
FET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
5.21mm
Weight :
453.59237mg
Number of Elements :
1
Base Product Number :
DN3545
Factory Lead Time :
6 Weeks
JESD-609 Code :
e3
Transistor Polarity :
N-Channel
MSL :
-
HTS Code :
8541.21.00.95
Power Dissipation-Max :
740mW Ta
Current - Continuous Drain (Id) @ 25°C :
136mA
Number of Channels :
1
Maximum Operating Temperature :
+150 °C
Vgs (Max) :
±20V
Manufacturer :
Microchip
Mount :
Through Hole
FET Feature :
Depletion Mode
Vgs(th) (Max) @ Id :
--
Surface Mount :
No
JESD-30 Code :
O-PBCY-W3
Configuration :
Single
Minimum Operating Temperature :
-55 °C
Channel Type :
N
Number of Terminations :
3
RoHS :
Details
Mounting Style :
Through Hole
Width :
4.19mm
Turn On Delay Time :
20 ns
Product Status :
Active
Datasheets
DN3545N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3545N3-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Mounting Type:Through Hole, Type:FET, Number of Channels:1, Number of Terminations:3, DN3545N3-G pinout, DN3545N3-G datasheet PDF, DN3545N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3545N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3545N3-G


N-Channel Bulk 20 Ω @ 150mA, 0V ±20V 360pF @ 25V 450V TO-226-3, TO-92-3 (TO-226AA)

DN3545N3-G Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 360pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 450V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 450V.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 450 V, it should remain above the 450 V level.The transistor must receive a 450V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (0V).

DN3545N3-G Features


a continuous drain current (ID) of 136mA
a drain-to-source breakdown voltage of 450V voltage
the turn-off delay time is 30 ns
a 450V drain to source voltage (Vdss)


DN3545N3-G Applications


There are a lot of Microchip Technology
DN3545N3-G applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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