DN3525N8-G

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Mfr.Part #
DN3525N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 250V 360MA TO243AA
Stock
40,762
In Stock :
40,762

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
Depletion Mode
Pulsed Drain Current-Max (IDM) :
1A
Package / Case :
TO-243AA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
360mA
Product Status :
Active
MSL :
MSL 1 - Unlimited
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
250V
Factory Lead Time :
7 Weeks
Product Category :
MOSFET
Length :
4.6mm
Lead Free :
Lead Free
Minimum Operating Temperature :
- 55 C
Drive Voltage (Max Rds On,Min Rds On) :
0V
Mounting Style :
SMD/SMT
Terminal Form :
Flat
Product :
MOSFET Small Signal
Surface Mount :
yes
REACH SVHC :
No SVHC
Drain to Source Breakdown Voltage :
250V
Number of Terminals :
3
Published :
2009
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Brand :
Microchip Technology
Width :
2.6mm
Channel Mode :
Depletion
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Vgs (Max) :
±20V
Product Type :
MOSFET
Transistor Type :
1 N-Channel
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
360mA Tj
Vgs(th) (Max) @ Id :
--
Series :
--
Number of Channels :
1
Continuous Drain Current Id :
360
Transistor Polarity :
N-Channel
Element Configuration :
Single
Mount :
Surface Mount
Turn-Off Delay Time :
25 ns
Power Dissipation :
1.6W
Time@Peak Reflow Temperature-Max (s) :
40
Type :
FET
Weight :
52.786812mg
Package Shape :
RECTANGULAR
Drain-source On Resistance-Max :
6Ohm
JEDEC-95 Code :
TO-243AA
Power Dissipation (Max) :
1.6W (Ta)
Height :
1.6mm
Terminal Finish :
Matte Tin (Sn) - annealed
Qualification Status :
Not Qualified
FET Type :
N-Channel
Base Product Number :
DN3525
Rds On (Max) @ Id, Vgs :
6 Ω @ 200mA, 0V
Channel Type :
N
DS Breakdown Voltage-Min :
250 V
Fall Time (Typ) :
25 ns
Rise Time :
25ns
Qualification :
-
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
RoHS :
Details
Operating Mode :
Depletion Mode
JESD-30 Code :
R-PSSO-F3
Power Dissipation-Max :
1.6W Ta
Number of Pins :
3
Number of Elements :
1
Mounting Type :
Surface Mount
Polarity/Channel Type :
N-Channel
Packaging :
Tape and Reel (TR)
Additional Feature :
FAST SWITCHING
Radiation Hardening :
No
Terminal Position :
Single
Subcategory :
MOSFETs
Maximum Operating Temperature :
+ 150 C
Manufacturer :
Microchip
Turn On Delay Time :
20 ns
Supplier Device Package :
TO-243AA (SOT-89)
Peak Reflow Temperature (Cel) :
260
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3525N8-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1, Type:FET, Number of Pins:3, Mounting Type:Surface Mount, DN3525N8-G pinout, DN3525N8-G datasheet PDF, DN3525N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3525N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3525N8-G


N-Channel Tape & Reel (TR) 6 Ω @ 200mA, 0V ±20V 350pF @ 25V 250V TO-243AA

DN3525N8-G Overview


A device's maximum input capacitance is 350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 360mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Its maximum pulsed drain current is 1A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 250 V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (0V) to reduce its overall power consumption.

DN3525N8-G Features


a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 1A.
a 250V drain to source voltage (Vdss)


DN3525N8-G Applications


There are a lot of Microchip Technology
DN3525N8-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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