DN3525N8-G
- Mfr.Part #
- DN3525N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 360MA TO243AA
- Stock
- 40,762
- In Stock :
- 40,762
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- Depletion Mode
- Pulsed Drain Current-Max (IDM) :
- 1A
- Package / Case :
- TO-243AA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 360mA
- Product Status :
- Active
- MSL :
- MSL 1 - Unlimited
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 250V
- Factory Lead Time :
- 7 Weeks
- Product Category :
- MOSFET
- Length :
- 4.6mm
- Lead Free :
- Lead Free
- Minimum Operating Temperature :
- - 55 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Mounting Style :
- SMD/SMT
- Terminal Form :
- Flat
- Product :
- MOSFET Small Signal
- Surface Mount :
- yes
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 250V
- Number of Terminals :
- 3
- Published :
- 2009
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Brand :
- Microchip Technology
- Width :
- 2.6mm
- Channel Mode :
- Depletion
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Vgs (Max) :
- ±20V
- Product Type :
- MOSFET
- Transistor Type :
- 1 N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 360mA Tj
- Vgs(th) (Max) @ Id :
- --
- Series :
- --
- Number of Channels :
- 1
- Continuous Drain Current Id :
- 360
- Transistor Polarity :
- N-Channel
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 25 ns
- Power Dissipation :
- 1.6W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Type :
- FET
- Weight :
- 52.786812mg
- Package Shape :
- RECTANGULAR
- Drain-source On Resistance-Max :
- 6Ohm
- JEDEC-95 Code :
- TO-243AA
- Power Dissipation (Max) :
- 1.6W (Ta)
- Height :
- 1.6mm
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Base Product Number :
- DN3525
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 200mA, 0V
- Channel Type :
- N
- DS Breakdown Voltage-Min :
- 250 V
- Fall Time (Typ) :
- 25 ns
- Rise Time :
- 25ns
- Qualification :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- RoHS :
- Details
- Operating Mode :
- Depletion Mode
- JESD-30 Code :
- R-PSSO-F3
- Power Dissipation-Max :
- 1.6W Ta
- Number of Pins :
- 3
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- FAST SWITCHING
- Radiation Hardening :
- No
- Terminal Position :
- Single
- Subcategory :
- MOSFETs
- Maximum Operating Temperature :
- + 150 C
- Manufacturer :
- Microchip
- Turn On Delay Time :
- 20 ns
- Supplier Device Package :
- TO-243AA (SOT-89)
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- DN3525N8-G
DN3525N8-G Documents

N-Channel Tape & Reel (TR) 6 Ω @ 200mA, 0V ±20V 350pF @ 25V 250V TO-243AA
DN3525N8-G Overview
A device's maximum input capacitance is 350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 360mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Its maximum pulsed drain current is 1A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 250 V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (0V) to reduce its overall power consumption.
DN3525N8-G Features
a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 1A.
a 250V drain to source voltage (Vdss)
DN3525N8-G Applications
There are a lot of Microchip Technology
DN3525N8-G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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