DN3525N8-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.6mm

Length :

4.6mm

Weight :

52.786812mg

Maximum Operating Temperature :

+ 150 C

Mount :

Surface Mount

JESD-609 Code :

e3

Channel Mode :

Depletion

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

7 Weeks

FET Feature :

Depletion Mode

Number of Channels :

1

Case Connection :

DRAIN

Transistor Type :

1 N-Channel

Product Type :

MOSFET

Supplier Device Package :

TO-243AA (SOT-89)

Mounting Style :

SMD/SMT

RoHS Status :

ROHS3 Compliant

Manufacturer :

Microchip

Continuous Drain Current Id :

360

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

2.6mm

Surface Mount :

yes

Vgs (Max) :

±20V

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

250V

Product Status :

Active

Channel Type :

N

REACH SVHC :

No SVHC

Terminal Position :

Single

Terminal Finish :

Matte Tin (Sn) - annealed

Turn On Delay Time :

20 ns

Polarity/Channel Type :

N-Channel

Published :

2009

DS Breakdown Voltage-Min :

250 V

JEDEC-95 Code :

TO-243AA

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

FAST SWITCHING

Fall Time (Typ) :

25 ns

Qualification Status :

Not Qualified

Radiation Hardening :

No

Product :

MOSFET Small Signal

Configuration :

Single

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

6 Ω @ 200mA, 0V

Base Product Number :

DN3525

Qualification :

-

Minimum Operating Temperature :

- 55 C

MSL :

MSL 1 - Unlimited

Power Dissipation (Max) :

1.6W (Ta)

Brand :

Microchip Technology

Product Category :

MOSFET

Transistor Polarity :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

0V

Package Shape :

RECTANGULAR

Pulsed Drain Current-Max (IDM) :

1A

Lead Free :

Lead Free

Drain-source On Resistance-Max :

6Ohm

Type :

FET

Subcategory :

MOSFETs

Terminal Form :

Flat

Operating Mode :

Depletion Mode

Number of Terminations :

3

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

250V

JESD-30 Code :

R-PSSO-F3

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

--

RoHS :

Details

Transistor Element Material :

SILICON

Power Dissipation :

1.6W

FET Type :

N-Channel

Continuous Drain Current (ID) :

360mA

Current - Continuous Drain (Id) @ 25°C :

360mA Tj

Number of Terminals :

3

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-243AA

Series :

--

Power Dissipation-Max :

1.6W Ta

Turn-Off Delay Time :

25 ns

Rise Time :

25ns